Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interface

W. N. Rodrigues; V. H. Etgens; M. Sauvage-Simkin; G. Rossi; F. Sirotti; R. Pinchaux; F. Rochet

doi:10.1016/0038-1098(95)00397-5

Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interface

W. N. Rodrigues
, V. H. Etgens
, M. Sauvage-Simkin
, G. Rossi
, F. Sirotti
, R. Pinchaux
, F. Rochet

Université Paris-Saclay

Research output: Contribution to journal › Article › peer-review

Abstract

The heteroepitaxy of InAs on a Te covered GaAs surface is investigated by photoelectron spectroscopy. Core-level spectra probed with synchrotron radiation show that Te remains at the interface between InAs and GaAs in a concentration much higher than the solubility limit of this element in III-V compounds, suggesting that a new compound is being formed. We propose that this interlayer is responsible for the observed changing in the growth mode of the InAs overlayer from islands to layer by layer.

Original language	English
Pages (from-to)	873-877
Number of pages	5
Journal	Solid State Communications
Volume	95
Issue number	12
DOIs	https://doi.org/10.1016/0038-1098(95)00397-5
Publication status	Published - 1 Jan 1995
Externally published	Yes

Keywords

A. semiconductors
A. surfaces and interfaces
B. epitaxy
E. photoelectron spectroscopies

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10.1016/0038-1098(95)00397-5

Cite this

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title = "Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interface",

abstract = "The heteroepitaxy of InAs on a Te covered GaAs surface is investigated by photoelectron spectroscopy. Core-level spectra probed with synchrotron radiation show that Te remains at the interface between InAs and GaAs in a concentration much higher than the solubility limit of this element in III-V compounds, suggesting that a new compound is being formed. We propose that this interlayer is responsible for the observed changing in the growth mode of the InAs overlayer from islands to layer by layer.",

keywords = "A. semiconductors, A. surfaces and interfaces, B. epitaxy, E. photoelectron spectroscopies",

author = "Rodrigues, \{W. N.\} and Etgens, \{V. H.\} and M. Sauvage-Simkin and G. Rossi and F. Sirotti and R. Pinchaux and F. Rochet",

year = "1995",

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doi = "10.1016/0038-1098(95)00397-5",

language = "English",

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TY - JOUR

T1 - Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interface

AU - Rodrigues, W. N.

AU - Etgens, V. H.

AU - Sauvage-Simkin, M.

AU - Rossi, G.

AU - Sirotti, F.

AU - Pinchaux, R.

AU - Rochet, F.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The heteroepitaxy of InAs on a Te covered GaAs surface is investigated by photoelectron spectroscopy. Core-level spectra probed with synchrotron radiation show that Te remains at the interface between InAs and GaAs in a concentration much higher than the solubility limit of this element in III-V compounds, suggesting that a new compound is being formed. We propose that this interlayer is responsible for the observed changing in the growth mode of the InAs overlayer from islands to layer by layer.

AB - The heteroepitaxy of InAs on a Te covered GaAs surface is investigated by photoelectron spectroscopy. Core-level spectra probed with synchrotron radiation show that Te remains at the interface between InAs and GaAs in a concentration much higher than the solubility limit of this element in III-V compounds, suggesting that a new compound is being formed. We propose that this interlayer is responsible for the observed changing in the growth mode of the InAs overlayer from islands to layer by layer.

KW - A. semiconductors

KW - A. surfaces and interfaces

KW - B. epitaxy

KW - E. photoelectron spectroscopies

UR - https://www.scopus.com/pages/publications/0029379055

U2 - 10.1016/0038-1098(95)00397-5

DO - 10.1016/0038-1098(95)00397-5

M3 - Article

AN - SCOPUS:0029379055

SN - 0038-1098

VL - 95

SP - 873

EP - 877

JO - Solid State Communications

JF - Solid State Communications

IS - 12

ER -

Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interface

Abstract

Keywords

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