High density Spin-Transfer Torque (STT)-MRAM based on cross-point architecture

Weisheng Zhao; Sumanta Chaudhuri; Celso Accoto; Jacques Olivier Klein; Dafiné Ravelosona; Claude Chappert; Pascale Mazoyer

doi:10.1109/IMW.2012.6213618

High density Spin-Transfer Torque (STT)-MRAM based on cross-point architecture

Weisheng Zhao
, Sumanta Chaudhuri
, Celso Accoto
, Jacques Olivier Klein
, Dafiné Ravelosona
, Claude Chappert
, Pascale Mazoyer

Université Paris-Saclay
Centre national de la recherche scientifique
STMicroelectronics SA, France

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the conventional access architecture based on 1 transistor + 1 memory cell limits its storage density as the selection transistor should be large enough to ensure the write current higher than the critical current for the STT operation. This paper describes a design of cross-point architecture for STT-MRAM. The mean area per word corresponds to only two transistors, which are shared by a number of bits (e.g. 64). This leads to significant improvement of data density (e.g. 1.75 F2/bit). Special techniques are also presented to address the sneak currents and low speed issues of conventional cross-point architecture.

Original language	English
Title of host publication	2012 4th IEEE International Memory Workshop, IMW 2012
DOIs	https://doi.org/10.1109/IMW.2012.6213618
Publication status	Published - 27 Jul 2012
Event	2012 4th IEEE International Memory Workshop, IMW 2012 - Milano, Italy Duration: 20 May 2012 → 23 May 2012

Publication series

Name	2012 4th IEEE International Memory Workshop, IMW 2012

Conference

Conference	2012 4th IEEE International Memory Workshop, IMW 2012
Country/Territory	Italy
City	Milano
Period	20/05/12 → 23/05/12

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10.1109/IMW.2012.6213618

Cite this

@inproceedings{f4f83b5bdf0b45c6b46ed7419994768f,

title = "High density Spin-Transfer Torque (STT)-MRAM based on cross-point architecture",

abstract = "Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the conventional access architecture based on 1 transistor + 1 memory cell limits its storage density as the selection transistor should be large enough to ensure the write current higher than the critical current for the STT operation. This paper describes a design of cross-point architecture for STT-MRAM. The mean area per word corresponds to only two transistors, which are shared by a number of bits (e.g. 64). This leads to significant improvement of data density (e.g. 1.75 F2/bit). Special techniques are also presented to address the sneak currents and low speed issues of conventional cross-point architecture.",

author = "Weisheng Zhao and Sumanta Chaudhuri and Celso Accoto and Klein, \{Jacques Olivier\} and Dafin{\'e} Ravelosona and Claude Chappert and Pascale Mazoyer",

year = "2012",

month = jul,

day = "27",

doi = "10.1109/IMW.2012.6213618",

language = "English",

isbn = "9781467310802",

series = "2012 4th IEEE International Memory Workshop, IMW 2012",

booktitle = "2012 4th IEEE International Memory Workshop, IMW 2012",

note = "2012 4th IEEE International Memory Workshop, IMW 2012 ; Conference date: 20-05-2012 Through 23-05-2012",

}

Zhao, W, Chaudhuri, S, Accoto, C, Klein, JO, Ravelosona, D, Chappert, C & Mazoyer, P 2012, High density Spin-Transfer Torque (STT)-MRAM based on cross-point architecture. in 2012 4th IEEE International Memory Workshop, IMW 2012., 6213618, 2012 4th IEEE International Memory Workshop, IMW 2012, 2012 4th IEEE International Memory Workshop, IMW 2012, Milano, Italy, 20/05/12. https://doi.org/10.1109/IMW.2012.6213618

TY - GEN

T1 - High density Spin-Transfer Torque (STT)-MRAM based on cross-point architecture

AU - Zhao, Weisheng

AU - Chaudhuri, Sumanta

AU - Accoto, Celso

AU - Klein, Jacques Olivier

AU - Ravelosona, Dafiné

AU - Chappert, Claude

AU - Mazoyer, Pascale

PY - 2012/7/27

Y1 - 2012/7/27

N2 - Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the conventional access architecture based on 1 transistor + 1 memory cell limits its storage density as the selection transistor should be large enough to ensure the write current higher than the critical current for the STT operation. This paper describes a design of cross-point architecture for STT-MRAM. The mean area per word corresponds to only two transistors, which are shared by a number of bits (e.g. 64). This leads to significant improvement of data density (e.g. 1.75 F2/bit). Special techniques are also presented to address the sneak currents and low speed issues of conventional cross-point architecture.

AB - Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the conventional access architecture based on 1 transistor + 1 memory cell limits its storage density as the selection transistor should be large enough to ensure the write current higher than the critical current for the STT operation. This paper describes a design of cross-point architecture for STT-MRAM. The mean area per word corresponds to only two transistors, which are shared by a number of bits (e.g. 64). This leads to significant improvement of data density (e.g. 1.75 F2/bit). Special techniques are also presented to address the sneak currents and low speed issues of conventional cross-point architecture.

UR - https://www.scopus.com/pages/publications/84864144572

U2 - 10.1109/IMW.2012.6213618

DO - 10.1109/IMW.2012.6213618

M3 - Conference contribution

AN - SCOPUS:84864144572

SN - 9781467310802

T3 - 2012 4th IEEE International Memory Workshop, IMW 2012

BT - 2012 4th IEEE International Memory Workshop, IMW 2012

T2 - 2012 4th IEEE International Memory Workshop, IMW 2012

Y2 - 20 May 2012 through 23 May 2012

ER -

High density Spin-Transfer Torque (STT)-MRAM based on cross-point architecture

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