High-energy heavy-ion irradiation into bulk GaAs for sub-picosecond wide-band efficient saturable absorbers

J. Mangeney; N. Stelmakh; A. Alexandrou; A. Shen; J. M. Lourtioz; V. Thierry-Mieg; J. L. Oudar

High-energy heavy-ion irradiation into bulk GaAs for sub-picosecond wide-band efficient saturable absorbers

J. Mangeney
, N. Stelmakh
, A. Alexandrou
, A. Shen
, J. M. Lourtioz
, V. Thierry-Mieg
, J. L. Oudar

Research output: Contribution to conference › Paper › peer-review

Abstract

Pump-probe experiments are conducted to measure the absorption relaxation time of bulk GaAs irradiated with 1.5 MeV protons, 30 MeV oxygen ions and 200 MeV gold ions, respectively. The GaAs layer thickness is approx. 10 μm so that ions could cross the samples without being implanted. A uniform concentration of defects per length unit is thus achieved.

Original language	English
Pages	107
Number of pages	1
Publication status	Published - 1 Jan 1998
Event	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland Duration: 14 Sept 1998 → 18 Sept 1998

Conference

Conference	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
City	Glasgow, Scotland
Period	14/09/98 → 18/09/98

Cite this

@conference{692107c027744c3398617c07473c8f61,

title = "High-energy heavy-ion irradiation into bulk GaAs for sub-picosecond wide-band efficient saturable absorbers",

abstract = "Pump-probe experiments are conducted to measure the absorption relaxation time of bulk GaAs irradiated with 1.5 MeV protons, 30 MeV oxygen ions and 200 MeV gold ions, respectively. The GaAs layer thickness is approx. 10 μm so that ions could cross the samples without being implanted. A uniform concentration of defects per length unit is thus achieved.",

author = "J. Mangeney and N. Stelmakh and A. Alexandrou and A. Shen and Lourtioz, \{J. M.\} and V. Thierry-Mieg and Oudar, \{J. L.\}",

year = "1998",

month = jan,

day = "1",

language = "English",

pages = "107",

note = "Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 ; Conference date: 14-09-1998 Through 18-09-1998",

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TY - CONF

T1 - High-energy heavy-ion irradiation into bulk GaAs for sub-picosecond wide-band efficient saturable absorbers

AU - Mangeney, J.

AU - Stelmakh, N.

AU - Alexandrou, A.

AU - Shen, A.

AU - Lourtioz, J. M.

AU - Thierry-Mieg, V.

AU - Oudar, J. L.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Pump-probe experiments are conducted to measure the absorption relaxation time of bulk GaAs irradiated with 1.5 MeV protons, 30 MeV oxygen ions and 200 MeV gold ions, respectively. The GaAs layer thickness is approx. 10 μm so that ions could cross the samples without being implanted. A uniform concentration of defects per length unit is thus achieved.

AB - Pump-probe experiments are conducted to measure the absorption relaxation time of bulk GaAs irradiated with 1.5 MeV protons, 30 MeV oxygen ions and 200 MeV gold ions, respectively. The GaAs layer thickness is approx. 10 μm so that ions could cross the samples without being implanted. A uniform concentration of defects per length unit is thus achieved.

M3 - Paper

AN - SCOPUS:0031634061

SP - 107

T2 - Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98

Y2 - 14 September 1998 through 18 September 1998

ER -

High-energy heavy-ion irradiation into bulk GaAs for sub-picosecond wide-band efficient saturable absorbers

Abstract

Conference

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