High-GF planar aluminium-silicon hybrid strain transducers

A. C.H. Rowe; Ch Renner; S. Arscott

doi:10.1109/SENSOR.2009.5285512

High-GF planar aluminium-silicon hybrid strain transducers

A. C.H. Rowe
, Ch Renner
, S. Arscott

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate here a simple planar aluminium-silicon strain sensor incorporating an external aluminium ohmic shunt (metal-semiconductor hybrid) which exhibits a geometrically enhanced room-temperature gauge factor (GF) of up to 843 under uni-axial tensile strains of up of 8×10^-5 for a silicon p-type doping level of 1×10¹⁷cm^-3. We also show that the GF is dependent on the silicon doping density; a GF of 317 being demonstrated for a p-type doping density of 1×10²⁰ cm ^-3. Moreover a GF well above 1000 is possible in more lightly doped samples. The observed behaviour, to be contrasted with the gauge factor of -93 observed in homogeneous p-type silicon, is the result of the stress-induced anisotropy in the silicon conductivity that acts to deflect the current away from the metallic shunt for tensile strains.

Original language	English
Title of host publication	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages	264-267
Number of pages	4
DOIs	https://doi.org/10.1109/SENSOR.2009.5285512
Publication status	Published - 11 Dec 2009
Event	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States Duration: 21 Jun 2009 → 25 Jun 2009

Publication series

Name	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Conference

Conference	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Country/Territory	United States
City	Denver, CO
Period	21/06/09 → 25/06/09

Keywords

Gauge factor
Hybrid device
Nano/microelectromechanical systems
Piezoresistance
Silicon
Strain gauge

Access to Document

10.1109/SENSOR.2009.5285512

Cite this

Rowe, A. C. H., Renner, C., & Arscott, S. (2009). High-GF planar aluminium-silicon hybrid strain transducers. In TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 264-267). Article 5285512 (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2009.5285512

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title = "High-GF planar aluminium-silicon hybrid strain transducers",

abstract = "We demonstrate here a simple planar aluminium-silicon strain sensor incorporating an external aluminium ohmic shunt (metal-semiconductor hybrid) which exhibits a geometrically enhanced room-temperature gauge factor (GF) of up to 843 under uni-axial tensile strains of up of 8×10-5 for a silicon p-type doping level of 1×1017cm-3. We also show that the GF is dependent on the silicon doping density; a GF of 317 being demonstrated for a p-type doping density of 1×1020 cm -3. Moreover a GF well above 1000 is possible in more lightly doped samples. The observed behaviour, to be contrasted with the gauge factor of -93 observed in homogeneous p-type silicon, is the result of the stress-induced anisotropy in the silicon conductivity that acts to deflect the current away from the metallic shunt for tensile strains.",

keywords = "Gauge factor, Hybrid device, Nano/microelectromechanical systems, Piezoresistance, Silicon, Strain gauge",

author = "Rowe, \{A. C.H.\} and Ch Renner and S. Arscott",

year = "2009",

month = dec,

day = "11",

doi = "10.1109/SENSOR.2009.5285512",

language = "English",

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series = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems",

pages = "264--267",

booktitle = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems",

note = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems ; Conference date: 21-06-2009 Through 25-06-2009",

}

Rowe, ACH, Renner, C & Arscott, S 2009, High-GF planar aluminium-silicon hybrid strain transducers. in TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems., 5285512, TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems, pp. 264-267, TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems, Denver, CO, United States, 21/06/09. https://doi.org/10.1109/SENSOR.2009.5285512

High-GF planar aluminium-silicon hybrid strain transducers. / Rowe, A. C.H.; Renner, Ch; Arscott, S.
TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. 2009. p. 264-267 5285512 (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-GF planar aluminium-silicon hybrid strain transducers

AU - Rowe, A. C.H.

AU - Renner, Ch

AU - Arscott, S.

PY - 2009/12/11

Y1 - 2009/12/11

N2 - We demonstrate here a simple planar aluminium-silicon strain sensor incorporating an external aluminium ohmic shunt (metal-semiconductor hybrid) which exhibits a geometrically enhanced room-temperature gauge factor (GF) of up to 843 under uni-axial tensile strains of up of 8×10-5 for a silicon p-type doping level of 1×1017cm-3. We also show that the GF is dependent on the silicon doping density; a GF of 317 being demonstrated for a p-type doping density of 1×1020 cm -3. Moreover a GF well above 1000 is possible in more lightly doped samples. The observed behaviour, to be contrasted with the gauge factor of -93 observed in homogeneous p-type silicon, is the result of the stress-induced anisotropy in the silicon conductivity that acts to deflect the current away from the metallic shunt for tensile strains.

AB - We demonstrate here a simple planar aluminium-silicon strain sensor incorporating an external aluminium ohmic shunt (metal-semiconductor hybrid) which exhibits a geometrically enhanced room-temperature gauge factor (GF) of up to 843 under uni-axial tensile strains of up of 8×10-5 for a silicon p-type doping level of 1×1017cm-3. We also show that the GF is dependent on the silicon doping density; a GF of 317 being demonstrated for a p-type doping density of 1×1020 cm -3. Moreover a GF well above 1000 is possible in more lightly doped samples. The observed behaviour, to be contrasted with the gauge factor of -93 observed in homogeneous p-type silicon, is the result of the stress-induced anisotropy in the silicon conductivity that acts to deflect the current away from the metallic shunt for tensile strains.

KW - Gauge factor

KW - Hybrid device

KW - Nano/microelectromechanical systems

KW - Piezoresistance

KW - Silicon

KW - Strain gauge

U2 - 10.1109/SENSOR.2009.5285512

DO - 10.1109/SENSOR.2009.5285512

M3 - Conference contribution

AN - SCOPUS:71449114953

SN - 9781424441938

T3 - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

SP - 264

EP - 267

BT - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

T2 - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Y2 - 21 June 2009 through 25 June 2009

ER -

High-GF planar aluminium-silicon hybrid strain transducers

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Keywords

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