High modal gain 9- and 12- layer InAs/InP Quantum Dash lasers emitting at 1.55 μM

G. Moreau; K. Merghem; D. Cong; G. Patriarche; F. Lelarge; B. Rousseau; B. Dagens; F. Poingt; A. Accard; F. Pommereau; A. Ramdane

High modal gain 9- and 12- layer InAs/InP Quantum Dash lasers emitting at 1.55 μM

G. Moreau
, K. Merghem
, D. Cong
, G. Patriarche
, F. Lelarge
, B. Rousseau
, B. Dagens
, F. Poingt
, A. Accard
, F. Pommereau
, A. Ramdane

Centre national de la recherche scientifique
Alcatel-Thales III-V Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report the successful growth of 9- and 12- layer InAs/InP Quantum Dash in-a-well (DWELL) laser structures using GSMBE. The performances of broad area (BA) lasers emitting at 1.55 μm are compared to those of devices made from 6-layer stacks. The impact of stacking on the modal gain and T₀ is investigated. The p-doping effect on the temperature stability is also discussed. Single ridge waveguide laser performance is finally reported.

Original language	English
Title of host publication	2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
Pages	411-414
Number of pages	4
Publication status	Published - 1 Dec 2006
Event	2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings - Princeton, United States Duration: 7 May 2006 → 11 May 2006

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Volume	2006
ISSN (Print)	1092-8669

Conference

Conference	2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
Country/Territory	United States
City	Princeton
Period	7/05/06 → 11/05/06

Cite this

Moreau, G., Merghem, K., Cong, D., Patriarche, G., Lelarge, F., Rousseau, B., Dagens, B., Poingt, F., Accard, A., Pommereau, F., & Ramdane, A. (2006). High modal gain 9- and 12- layer InAs/InP Quantum Dash lasers emitting at 1.55 μM. In 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings (pp. 411-414). Article 1634203 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2006).

@inproceedings{a7dffb3a65634ec08a330df21f4be1ed,

title = "High modal gain 9- and 12- layer InAs/InP Quantum Dash lasers emitting at 1.55 μM",

abstract = "We report the successful growth of 9- and 12- layer InAs/InP Quantum Dash in-a-well (DWELL) laser structures using GSMBE. The performances of broad area (BA) lasers emitting at 1.55 μm are compared to those of devices made from 6-layer stacks. The impact of stacking on the modal gain and T0 is investigated. The p-doping effect on the temperature stability is also discussed. Single ridge waveguide laser performance is finally reported.",

author = "G. Moreau and K. Merghem and D. Cong and G. Patriarche and F. Lelarge and B. Rousseau and B. Dagens and F. Poingt and A. Accard and F. Pommereau and A. Ramdane",

year = "2006",

month = dec,

day = "1",

language = "English",

isbn = "0780395581",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "411--414",

booktitle = "2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings",

note = "2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ; Conference date: 07-05-2006 Through 11-05-2006",

}

Moreau, G, Merghem, K, Cong, D, Patriarche, G, Lelarge, F, Rousseau, B, Dagens, B, Poingt, F, Accard, A, Pommereau, F & Ramdane, A 2006, High modal gain 9- and 12- layer InAs/InP Quantum Dash lasers emitting at 1.55 μM. in 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings., 1634203, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, vol. 2006, pp. 411-414, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, United States, 7/05/06.

High modal gain 9- and 12- layer InAs/InP Quantum Dash lasers emitting at 1.55 μM. / Moreau, G.; Merghem, K.; Cong, D. et al.
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings. 2006. p. 411-414 1634203 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High modal gain 9- and 12- layer InAs/InP Quantum Dash lasers emitting at 1.55 μM

AU - Moreau, G.

AU - Merghem, K.

AU - Cong, D.

AU - Patriarche, G.

AU - Lelarge, F.

AU - Rousseau, B.

AU - Dagens, B.

AU - Poingt, F.

AU - Accard, A.

AU - Pommereau, F.

AU - Ramdane, A.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We report the successful growth of 9- and 12- layer InAs/InP Quantum Dash in-a-well (DWELL) laser structures using GSMBE. The performances of broad area (BA) lasers emitting at 1.55 μm are compared to those of devices made from 6-layer stacks. The impact of stacking on the modal gain and T0 is investigated. The p-doping effect on the temperature stability is also discussed. Single ridge waveguide laser performance is finally reported.

AB - We report the successful growth of 9- and 12- layer InAs/InP Quantum Dash in-a-well (DWELL) laser structures using GSMBE. The performances of broad area (BA) lasers emitting at 1.55 μm are compared to those of devices made from 6-layer stacks. The impact of stacking on the modal gain and T0 is investigated. The p-doping effect on the temperature stability is also discussed. Single ridge waveguide laser performance is finally reported.

M3 - Conference contribution

AN - SCOPUS:33847154549

SN - 0780395581

SN - 9780780395589

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 411

EP - 414

BT - 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings

T2 - 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings

Y2 - 7 May 2006 through 11 May 2006

ER -

Moreau G, Merghem K, Cong D, Patriarche G, Lelarge F, Rousseau B et al. High modal gain 9- and 12- layer InAs/InP Quantum Dash lasers emitting at 1.55 μM. In 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings. 2006. p. 411-414. 1634203. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

High modal gain 9- and 12- layer InAs/InP Quantum Dash lasers emitting at 1.55 μM

Abstract

Publication series

Conference

Fingerprint

Cite this