High-pass or low-pass ΔΣ modulators?

Chadi Jabbour; Hasham Ahmed Khushk; Van Tam Nguyen; Patrick Loumeau

doi:10.1109/ICECS.2011.6122257

High-pass or low-pass ΔΣ modulators?

Chadi Jabbour, Hasham Ahmed Khushk, Van Tam Nguyen, Patrick Loumeau

CNRS LTCI

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, High-Pass (HP) ΔΣ modulators are compared to the traditional Low-Pass (LP) ΔΣ modulators. The objective of this comparison is to point out the advantages and drawbacks of the two modulators thereby allowing to choose the most suited for a given application. The metrics of comparison are the noise floor, power consumption, surface area and the effect of the non-idealities of all the basic blocks (i-e Operational Transconductance Amplifier (OTA), Quantizer, Switches and Clocks). It turns out that HP modulators are more suited for narrow band applications because of their immunity against DC-offset and flicker noise. For medium and wide band applications, LP modulators are preferred because of their higher robustness against switch imperfections and clock jitter.

Original language	English
Title of host publication	2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011
Pages	236-239
Number of pages	4
DOIs	https://doi.org/10.1109/ICECS.2011.6122257
Publication status	Published - 1 Dec 2011
Externally published	Yes
Event	2011 18th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2011 - Beirut, Lebanon Duration: 11 Dec 2011 → 14 Dec 2011

Publication series

Name	2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011

Conference

Conference	2011 18th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2011
Country/Territory	Lebanon
City	Beirut
Period	11/12/11 → 14/12/11

Access to Document

10.1109/ICECS.2011.6122257

Cite this

@inproceedings{81665bc7c9014d288916ac8feaef0cb6,

title = "High-pass or low-pass ΔΣ modulators?",

abstract = "In this paper, High-Pass (HP) ΔΣ modulators are compared to the traditional Low-Pass (LP) ΔΣ modulators. The objective of this comparison is to point out the advantages and drawbacks of the two modulators thereby allowing to choose the most suited for a given application. The metrics of comparison are the noise floor, power consumption, surface area and the effect of the non-idealities of all the basic blocks (i-e Operational Transconductance Amplifier (OTA), Quantizer, Switches and Clocks). It turns out that HP modulators are more suited for narrow band applications because of their immunity against DC-offset and flicker noise. For medium and wide band applications, LP modulators are preferred because of their higher robustness against switch imperfections and clock jitter.",

author = "Chadi Jabbour and Khushk, \{Hasham Ahmed\} and Nguyen, \{Van Tam\} and Patrick Loumeau",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/ICECS.2011.6122257",

language = "English",

isbn = "9781457718458",

series = "2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011",

pages = "236--239",

booktitle = "2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011",

note = "2011 18th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2011 ; Conference date: 11-12-2011 Through 14-12-2011",

}

Jabbour, C, Khushk, HA, Nguyen, VT & Loumeau, P 2011, High-pass or low-pass ΔΣ modulators? in 2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011., 6122257, 2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011, pp. 236-239, 2011 18th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2011, Beirut, Lebanon, 11/12/11. https://doi.org/10.1109/ICECS.2011.6122257

High-pass or low-pass ΔΣ modulators? / Jabbour, Chadi; Khushk, Hasham Ahmed; Nguyen, Van Tam et al.
2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011. 2011. p. 236-239 6122257 (2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review