High-pressure study of solid phase epitaxial regrowth in implanted amorphous GaAs

C. Licoppe; H. Savary

doi:10.1063/1.98852

High-pressure study of solid phase epitaxial regrowth in implanted amorphous GaAs

C. Licoppe, H. Savary

Orange Labs

Research output: Contribution to journal › Article › peer-review

Abstract

A new in situ technique for determination of solid phase epitaxial regrowth kinetics under high-pressure conditions is described. It is applied to the study of pressure effects on recrystallization kinetics of amorphous implanted GaAs. The results show that the epitaxial growth rate is enhanced with pressure. An empirical formalism is developed describing the effect of pressure as a softening of the acoustic modes and a consequent decrease of the activation energies. Good agreement is obtained with the experimental data.

Original language	English
Pages (from-to)	740-742
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	10
DOIs	https://doi.org/10.1063/1.98852
Publication status	Published - 1 Dec 1987
Externally published	Yes

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@article{164e1d92827e412ba36542931e48d5fa,

title = "High-pressure study of solid phase epitaxial regrowth in implanted amorphous GaAs",

abstract = "A new in situ technique for determination of solid phase epitaxial regrowth kinetics under high-pressure conditions is described. It is applied to the study of pressure effects on recrystallization kinetics of amorphous implanted GaAs. The results show that the epitaxial growth rate is enhanced with pressure. An empirical formalism is developed describing the effect of pressure as a softening of the acoustic modes and a consequent decrease of the activation energies. Good agreement is obtained with the experimental data.",

author = "C. Licoppe and H. Savary",

year = "1987",

month = dec,

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doi = "10.1063/1.98852",

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journal = "Applied Physics Letters",

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T1 - High-pressure study of solid phase epitaxial regrowth in implanted amorphous GaAs

AU - Licoppe, C.

AU - Savary, H.

PY - 1987/12/1

Y1 - 1987/12/1

N2 - A new in situ technique for determination of solid phase epitaxial regrowth kinetics under high-pressure conditions is described. It is applied to the study of pressure effects on recrystallization kinetics of amorphous implanted GaAs. The results show that the epitaxial growth rate is enhanced with pressure. An empirical formalism is developed describing the effect of pressure as a softening of the acoustic modes and a consequent decrease of the activation energies. Good agreement is obtained with the experimental data.

AB - A new in situ technique for determination of solid phase epitaxial regrowth kinetics under high-pressure conditions is described. It is applied to the study of pressure effects on recrystallization kinetics of amorphous implanted GaAs. The results show that the epitaxial growth rate is enhanced with pressure. An empirical formalism is developed describing the effect of pressure as a softening of the acoustic modes and a consequent decrease of the activation energies. Good agreement is obtained with the experimental data.

U2 - 10.1063/1.98852

DO - 10.1063/1.98852

M3 - Article

AN - SCOPUS:0347869362

SN - 0003-6951

VL - 51

SP - 740

EP - 742

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

High-pressure study of solid phase epitaxial regrowth in implanted amorphous GaAs

Abstract

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