High repetition rate two-section InAs/InP quantum-dash passively mode locked lasers

  • R. Rosales
  • , K. Merghem
  • , A. Martinez
  • , A. Accard
  • , F. Lelarge
  • , A. Ramdane

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

First observations of 2-section InAs/InP quantum-dash passive mode locking (ML) at fundamental repetition frequencies up to ∼ 100 GHz are presented. The effects of gain/absorber section lengths and driving conditions on ML characteristics are systematically investigated.

Original languageEnglish
Title of host publication2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Publication statusPublished - 1 Dec 2011
Externally publishedYes
Event2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, Germany
Duration: 22 May 201126 May 2011

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Country/TerritoryGermany
CityBerlin
Period22/05/1126/05/11

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