High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se                         2                          surface

B. Canava; J. Vigneron; A. Etcheberry; J. F. Guillemoles; D. Lincot

doi:10.1016/S0169-4332(02)00186-1

High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se ₂ surface

B. Canava
, J. Vigneron
, A. Etcheberry
, J. F. Guillemoles
, D. Lincot

Institut Lavoisier de Versailles
Laboratoire Charles Friedel (LCF)

Research output: Contribution to journal › Article › peer-review

Abstract

Chemistry of co-evaporated Cu(In, Ga)Se ₂ (CIGS) surfaces submitted or not to chemical treatments was investigated by high resolution XPS. The surface analysis allowed us to compare the surface composition with the bulk one as a function of the treatments. We also studied too several standard compounds as Cu _2-x Se, In ₂ Se ₃ , ZnSe, Se ⁰ and CdSe. A Se XPS signal specific of the CIGS surfaces was identified. In this paper, we present a detailed study of Se signal in CIGS and show of the different spectroscopic contributions can be separated using standards information. Then, we discuss the chemical origin of these signals and the implications for the device processing.

Original language	English
Pages (from-to)	8-14
Number of pages	7
Journal	Applied Surface Science
Volume	202
Issue number	1-2
DOIs	https://doi.org/10.1016/S0169-4332(02)00186-1
Publication status	Published - 15 Dec 2002
Externally published	Yes

Keywords

CIGS
Chemistry
Se
Surface
XPS

Access to Document

10.1016/S0169-4332(02)00186-1

Cite this

@article{1dce2a5a9cb4423ba3fa6830ae702099,

title = " High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se 2 surface ",

abstract = " Chemistry of co-evaporated Cu(In, Ga)Se 2 (CIGS) surfaces submitted or not to chemical treatments was investigated by high resolution XPS. The surface analysis allowed us to compare the surface composition with the bulk one as a function of the treatments. We also studied too several standard compounds as Cu 2-x Se, In 2 Se 3 , ZnSe, Se 0 and CdSe. A Se XPS signal specific of the CIGS surfaces was identified. In this paper, we present a detailed study of Se signal in CIGS and show of the different spectroscopic contributions can be separated using standards information. Then, we discuss the chemical origin of these signals and the implications for the device processing.",

keywords = "CIGS, Chemistry, Se, Surface, XPS",

author = "B. Canava and J. Vigneron and A. Etcheberry and Guillemoles, \{J. F.\} and D. Lincot",

year = "2002",

month = dec,

day = "15",

doi = "10.1016/S0169-4332(02)00186-1",

language = "English",

volume = "202",

pages = "8--14",

journal = "Applied Surface Science",

issn = "0169-4332",

number = "1-2",

}

TY - JOUR

T1 - High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se 2 surface

AU - Canava, B.

AU - Vigneron, J.

AU - Etcheberry, A.

AU - Guillemoles, J. F.

AU - Lincot, D.

PY - 2002/12/15

Y1 - 2002/12/15

N2 - Chemistry of co-evaporated Cu(In, Ga)Se 2 (CIGS) surfaces submitted or not to chemical treatments was investigated by high resolution XPS. The surface analysis allowed us to compare the surface composition with the bulk one as a function of the treatments. We also studied too several standard compounds as Cu 2-x Se, In 2 Se 3 , ZnSe, Se 0 and CdSe. A Se XPS signal specific of the CIGS surfaces was identified. In this paper, we present a detailed study of Se signal in CIGS and show of the different spectroscopic contributions can be separated using standards information. Then, we discuss the chemical origin of these signals and the implications for the device processing.

AB - Chemistry of co-evaporated Cu(In, Ga)Se 2 (CIGS) surfaces submitted or not to chemical treatments was investigated by high resolution XPS. The surface analysis allowed us to compare the surface composition with the bulk one as a function of the treatments. We also studied too several standard compounds as Cu 2-x Se, In 2 Se 3 , ZnSe, Se 0 and CdSe. A Se XPS signal specific of the CIGS surfaces was identified. In this paper, we present a detailed study of Se signal in CIGS and show of the different spectroscopic contributions can be separated using standards information. Then, we discuss the chemical origin of these signals and the implications for the device processing.

KW - CIGS

KW - Chemistry

KW - Se

KW - Surface

KW - XPS

UR - https://www.scopus.com/pages/publications/0037114353

U2 - 10.1016/S0169-4332(02)00186-1

DO - 10.1016/S0169-4332(02)00186-1

M3 - Article

AN - SCOPUS:0037114353

SN - 0169-4332

VL - 202

SP - 8

EP - 14

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-2

ER -

High resolution XPS studies of Se chemistry of a Cu(In, Ga)Se ₂ surface

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this