High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials

O. Gauthier-Lafaye; V. Colson; J. Py; B. Thedrez; J. L. Gentner

doi:10.1049/el:20020189

High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials

O. Gauthier-Lafaye, V. Colson, J. Py, B. Thedrez, J. L. Gentner

Research and Invovation Department

Research output: Contribution to journal › Article › peer-review

Abstract

Uncooled 10 Gbit/s direct modulation of high-power 1.3 μm InAsP/InGaAsP directly modulated multiple quantum well distributed feedback (DFB) lasers is demonstrated. High resonant frequencies and high efficiency at 85°C are obtained due to the high epitaxial quality of ternary, aluminium-free, quantum wells. Floor-free transmission on 90 and 140 ps/nm within ITU recommendations are demonstrated.

Original language	English
Pages (from-to)	275-277
Number of pages	3
Journal	Electronics Letters
Volume	38
Issue number	6
DOIs	https://doi.org/10.1049/el:20020189
Publication status	Published - 14 Mar 2002
Externally published	Yes

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10.1049/el:20020189

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title = "High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials",

abstract = "Uncooled 10 Gbit/s direct modulation of high-power 1.3 μm InAsP/InGaAsP directly modulated multiple quantum well distributed feedback (DFB) lasers is demonstrated. High resonant frequencies and high efficiency at 85°C are obtained due to the high epitaxial quality of ternary, aluminium-free, quantum wells. Floor-free transmission on 90 and 140 ps/nm within ITU recommendations are demonstrated.",

author = "O. Gauthier-Lafaye and V. Colson and J. Py and B. Thedrez and Gentner, \{J. L.\}",

year = "2002",

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doi = "10.1049/el:20020189",

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journal = "Electronics Letters",

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T1 - High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials

AU - Gauthier-Lafaye, O.

AU - Colson, V.

AU - Py, J.

AU - Thedrez, B.

AU - Gentner, J. L.

PY - 2002/3/14

Y1 - 2002/3/14

N2 - Uncooled 10 Gbit/s direct modulation of high-power 1.3 μm InAsP/InGaAsP directly modulated multiple quantum well distributed feedback (DFB) lasers is demonstrated. High resonant frequencies and high efficiency at 85°C are obtained due to the high epitaxial quality of ternary, aluminium-free, quantum wells. Floor-free transmission on 90 and 140 ps/nm within ITU recommendations are demonstrated.

AB - Uncooled 10 Gbit/s direct modulation of high-power 1.3 μm InAsP/InGaAsP directly modulated multiple quantum well distributed feedback (DFB) lasers is demonstrated. High resonant frequencies and high efficiency at 85°C are obtained due to the high epitaxial quality of ternary, aluminium-free, quantum wells. Floor-free transmission on 90 and 140 ps/nm within ITU recommendations are demonstrated.

U2 - 10.1049/el:20020189

DO - 10.1049/el:20020189

M3 - Article

AN - SCOPUS:0037075649

SN - 0013-5194

VL - 38

SP - 275

EP - 277

JO - Electronics Letters

JF - Electronics Letters

IS - 6

ER -

High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials

Abstract

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