High temperature LPCVD of dielectrics on III-V substrates for device appliclations

Y. I. Nissim; J. M. Moison; C. Licoppe; G. Post

High temperature LPCVD of dielectrics on III-V substrates for device appliclations

Y. I. Nissim
, J. M. Moison
, C. Licoppe
, G. Post

C.N.E.T.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Silicon dioxide as well as silicon nitride films deposited on a III-V substrate (InP, GaAs, InGaAs) are obtained in a reduced pressure, air and water cooled CVD reactor, with a rapid thermal heating. Deposition rates as high as 100 Å/sec are obtained for deposition of SiO₂ at 700°C and 30 Å/sec for Si₃N₄ at 800°C. High temperature deposition is thus obtained on a III-V substrate without any surface damage. The layers display excellent structural and electrical properties suited for passivation and MISFET applications. The properties of III-V semiconductor/insulator interfaces can be improved under an in-situ treatment of the substrate with the reactive gases. Interface studies show that both silane and armmonia can be utilized prior to deposition to reduce native oxide of InP.

Original language	English
Title of host publication	ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
Editors	Heiner Ryssel, Anton Heuberger, Peter Lange
Publisher	IEEE Computer Society
Pages	173-176
Number of pages	4
ISBN (Electronic)	0387510001
ISBN (Print)	9780387510002
Publication status	Published - 1 Jan 1989
Externally published	Yes
Event	19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany Duration: 11 Sept 1989 → 14 Sept 1989

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	19th European Solid State Device Research Conference, ESSDERC 1989
Country/Territory	Germany
City	Berlin
Period	11/09/89 → 14/09/89

Cite this

Nissim, Y. I., Moison, J. M., Licoppe, C., & Post, G. (1989). High temperature LPCVD of dielectrics on III-V substrates for device appliclations. In H. Ryssel, A. Heuberger, & P. Lange (Eds.), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 173-176). Article 5436641 (European Solid-State Device Research Conference). IEEE Computer Society.

Nissim, Y. I. ; Moison, J. M. ; Licoppe, C. et al. / High temperature LPCVD of dielectrics on III-V substrates for device appliclations. ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. editor / Heiner Ryssel ; Anton Heuberger ; Peter Lange. IEEE Computer Society, 1989. pp. 173-176 (European Solid-State Device Research Conference).

@inproceedings{715597a681f84791aba637393fe9828d,

title = "High temperature LPCVD of dielectrics on III-V substrates for device appliclations",

abstract = "Silicon dioxide as well as silicon nitride films deposited on a III-V substrate (InP, GaAs, InGaAs) are obtained in a reduced pressure, air and water cooled CVD reactor, with a rapid thermal heating. Deposition rates as high as 100 {\AA}/sec are obtained for deposition of SiO2 at 700°C and 30 {\AA}/sec for Si3N4 at 800°C. High temperature deposition is thus obtained on a III-V substrate without any surface damage. The layers display excellent structural and electrical properties suited for passivation and MISFET applications. The properties of III-V semiconductor/insulator interfaces can be improved under an in-situ treatment of the substrate with the reactive gases. Interface studies show that both silane and armmonia can be utilized prior to deposition to reduce native oxide of InP.",

author = "Nissim, \{Y. I.\} and Moison, \{J. M.\} and C. Licoppe and G. Post",

note = "Publisher Copyright: {\textcopyright} 1989 Springer-Verlag Heidelberg. {\textcopyright} 1989 Springer-Verlag Bcrbn Heidelberg. All Rights Reserved.; 19th European Solid State Device Research Conference, ESSDERC 1989 ; Conference date: 11-09-1989 Through 14-09-1989",

year = "1989",

month = jan,

day = "1",

language = "English",

isbn = "9780387510002",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "173--176",

editor = "Heiner Ryssel and Anton Heuberger and Peter Lange",

booktitle = "ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference",

}

Nissim, YI, Moison, JM, Licoppe, C & Post, G 1989, High temperature LPCVD of dielectrics on III-V substrates for device appliclations. in H Ryssel, A Heuberger & P Lange (eds), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference., 5436641, European Solid-State Device Research Conference, IEEE Computer Society, pp. 173-176, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 11/09/89.

High temperature LPCVD of dielectrics on III-V substrates for device appliclations. / Nissim, Y. I.; Moison, J. M.; Licoppe, C. et al.
ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. ed. / Heiner Ryssel; Anton Heuberger; Peter Lange. IEEE Computer Society, 1989. p. 173-176 5436641 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High temperature LPCVD of dielectrics on III-V substrates for device appliclations

AU - Nissim, Y. I.

AU - Moison, J. M.

AU - Licoppe, C.

AU - Post, G.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - Silicon dioxide as well as silicon nitride films deposited on a III-V substrate (InP, GaAs, InGaAs) are obtained in a reduced pressure, air and water cooled CVD reactor, with a rapid thermal heating. Deposition rates as high as 100 Å/sec are obtained for deposition of SiO2 at 700°C and 30 Å/sec for Si3N4 at 800°C. High temperature deposition is thus obtained on a III-V substrate without any surface damage. The layers display excellent structural and electrical properties suited for passivation and MISFET applications. The properties of III-V semiconductor/insulator interfaces can be improved under an in-situ treatment of the substrate with the reactive gases. Interface studies show that both silane and armmonia can be utilized prior to deposition to reduce native oxide of InP.

AB - Silicon dioxide as well as silicon nitride films deposited on a III-V substrate (InP, GaAs, InGaAs) are obtained in a reduced pressure, air and water cooled CVD reactor, with a rapid thermal heating. Deposition rates as high as 100 Å/sec are obtained for deposition of SiO2 at 700°C and 30 Å/sec for Si3N4 at 800°C. High temperature deposition is thus obtained on a III-V substrate without any surface damage. The layers display excellent structural and electrical properties suited for passivation and MISFET applications. The properties of III-V semiconductor/insulator interfaces can be improved under an in-situ treatment of the substrate with the reactive gases. Interface studies show that both silane and armmonia can be utilized prior to deposition to reduce native oxide of InP.

M3 - Conference contribution

AN - SCOPUS:84907834062

SN - 9780387510002

T3 - European Solid-State Device Research Conference

SP - 173

EP - 176

BT - ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference

A2 - Ryssel, Heiner

A2 - Heuberger, Anton

A2 - Lange, Peter

PB - IEEE Computer Society

T2 - 19th European Solid State Device Research Conference, ESSDERC 1989

Y2 - 11 September 1989 through 14 September 1989

ER -

High temperature LPCVD of dielectrics on III-V substrates for device appliclations

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