High tensile strain transfer into germanium microdisks using all-around strained SiN

Abdelhamid Ghrib; Moustafa El Kurdi; Mathias Prost; Sébastien Sauvage; Grégoire Beaudoin; Ludovic Largeau; Marc Chaigneau; Razvigor Ossikovski; Isabelle Sagnes; Philippe Boucaud

doi:10.1109/Group4.2014.6961938

High tensile strain transfer into germanium microdisks using all-around strained SiN

Abdelhamid Ghrib
, Moustafa El Kurdi
, Mathias Prost
, Sébastien Sauvage
, Grégoire Beaudoin
, Ludovic Largeau
, Marc Chaigneau
, Razvigor Ossikovski
, Isabelle Sagnes
, Philippe Boucaud

Centre national de la recherche scientifique
STMicroelectronics SA, France
Centre de Nanosciences et de Nanotechnologies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate an optimized homogeneous tensile-strain transfer into germanium microdisks up to around 1.5% biaxial strain. This is achieved by combining a bonding technique and an all-around deposition of strained silicon nitride.

Original language	English
Title of host publication	IEEE International Conference on Group IV Photonics GFP
Publisher	IEEE Computer Society
Pages	229-230
Number of pages	2
ISBN (Electronic)	9781479922833
DOIs	https://doi.org/10.1109/Group4.2014.6961938
Publication status	Published - 18 Nov 2014
Event	11th International Conference on Group IV Photonics, GFP 2014 - Paris, France Duration: 27 Aug 2014 → 29 Aug 2014

Publication series

Name	IEEE International Conference on Group IV Photonics GFP
ISSN (Print)	1949-2081

Conference

Conference	11th International Conference on Group IV Photonics, GFP 2014
Country/Territory	France
City	Paris
Period	27/08/14 → 29/08/14

Keywords

Raman
Silicon photonics
germanium
integrated laser
microdisk cavity
photoluminescence
strain engineering

Access to Document

10.1109/Group4.2014.6961938

Cite this

Ghrib, A., El Kurdi, M., Prost, M., Sauvage, S., Beaudoin, G., Largeau, L., Chaigneau, M., Ossikovski, R., Sagnes, I., & Boucaud, P. (2014). High tensile strain transfer into germanium microdisks using all-around strained SiN. In IEEE International Conference on Group IV Photonics GFP (pp. 229-230). Article 6961938 (IEEE International Conference on Group IV Photonics GFP). IEEE Computer Society. https://doi.org/10.1109/Group4.2014.6961938

@inproceedings{15fccf54ce3e4674be908de2f06b7f78,

title = "High tensile strain transfer into germanium microdisks using all-around strained SiN",

abstract = "We demonstrate an optimized homogeneous tensile-strain transfer into germanium microdisks up to around 1.5\% biaxial strain. This is achieved by combining a bonding technique and an all-around deposition of strained silicon nitride.",

keywords = "Raman, Silicon photonics, germanium, integrated laser, microdisk cavity, photoluminescence, strain engineering",

author = "Abdelhamid Ghrib and \{El Kurdi\}, Moustafa and Mathias Prost and S{\'e}bastien Sauvage and Gr{\'e}goire Beaudoin and Ludovic Largeau and Marc Chaigneau and Razvigor Ossikovski and Isabelle Sagnes and Philippe Boucaud",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 11th International Conference on Group IV Photonics, GFP 2014 ; Conference date: 27-08-2014 Through 29-08-2014",

year = "2014",

month = nov,

day = "18",

doi = "10.1109/Group4.2014.6961938",

language = "English",

series = "IEEE International Conference on Group IV Photonics GFP",

publisher = "IEEE Computer Society",

pages = "229--230",

booktitle = "IEEE International Conference on Group IV Photonics GFP",

}

Ghrib, A, El Kurdi, M, Prost, M, Sauvage, S, Beaudoin, G, Largeau, L, Chaigneau, M, Ossikovski, R, Sagnes, I & Boucaud, P 2014, High tensile strain transfer into germanium microdisks using all-around strained SiN. in IEEE International Conference on Group IV Photonics GFP., 6961938, IEEE International Conference on Group IV Photonics GFP, IEEE Computer Society, pp. 229-230, 11th International Conference on Group IV Photonics, GFP 2014, Paris, France, 27/08/14. https://doi.org/10.1109/Group4.2014.6961938

High tensile strain transfer into germanium microdisks using all-around strained SiN. / Ghrib, Abdelhamid; El Kurdi, Moustafa; Prost, Mathias et al.
IEEE International Conference on Group IV Photonics GFP. IEEE Computer Society, 2014. p. 229-230 6961938 (IEEE International Conference on Group IV Photonics GFP).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High tensile strain transfer into germanium microdisks using all-around strained SiN

AU - Ghrib, Abdelhamid

AU - El Kurdi, Moustafa

AU - Prost, Mathias

AU - Sauvage, Sébastien

AU - Beaudoin, Grégoire

AU - Largeau, Ludovic

AU - Chaigneau, Marc

AU - Ossikovski, Razvigor

AU - Sagnes, Isabelle

AU - Boucaud, Philippe

PY - 2014/11/18

Y1 - 2014/11/18

N2 - We demonstrate an optimized homogeneous tensile-strain transfer into germanium microdisks up to around 1.5% biaxial strain. This is achieved by combining a bonding technique and an all-around deposition of strained silicon nitride.

AB - We demonstrate an optimized homogeneous tensile-strain transfer into germanium microdisks up to around 1.5% biaxial strain. This is achieved by combining a bonding technique and an all-around deposition of strained silicon nitride.

KW - Raman

KW - Silicon photonics

KW - germanium

KW - integrated laser

KW - microdisk cavity

KW - photoluminescence

KW - strain engineering

U2 - 10.1109/Group4.2014.6961938

DO - 10.1109/Group4.2014.6961938

M3 - Conference contribution

AN - SCOPUS:84914145343

T3 - IEEE International Conference on Group IV Photonics GFP

SP - 229

EP - 230

BT - IEEE International Conference on Group IV Photonics GFP

PB - IEEE Computer Society

T2 - 11th International Conference on Group IV Photonics, GFP 2014

Y2 - 27 August 2014 through 29 August 2014

ER -

High tensile strain transfer into germanium microdisks using all-around strained SiN

Abstract

Publication series

Conference

Keywords

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