Highly-doped, highly-strained germanium and Schottky electroluminescent diodes

M. El Kurdi; M. Prost; A. Ghrib; X. Checoury; S. Sauvage; N. Zerounian; F. Aniel; G. Beaudoin; I. Sagnes; V. Le Thanh; T. K.P. Luong; M. Chaigneau; R. Ossikovski; C. Baudot; F. Boeuf; P. Boucaud

doi:10.1149/06406.0359ecst

Highly-doped, highly-strained germanium and Schottky electroluminescent diodes

M. El Kurdi
, M. Prost
, A. Ghrib
, X. Checoury
, S. Sauvage
, N. Zerounian
, F. Aniel
, G. Beaudoin
, I. Sagnes
, V. Le Thanh
, T. K.P. Luong
, M. Chaigneau
, R. Ossikovski
, C. Baudot
, F. Boeuf
, P. Boucaud

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate that room temperature electroluminescence can be obtained from n-doped germanium layers by using a Schottky contact. The electrical and optical properties of the Schottky device are improved by inserting a thin Al2O3 interfacial barrier. We also show that high active doping of Ge grown on Si can be obtained by molecular beam epitaxy by using a co-doping method with Sb and P. We finally discuss the transfer of tensile strain on microdisk resonators using silicon nitride stressor layers.

Original language	English
Pages (from-to)	359-364
Number of pages	6
Journal	ECS Transactions
Volume	64
Issue number	6
DOIs	https://doi.org/10.1149/06406.0359ecst
Publication status	Published - 1 Jan 2014
Event	6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: 5 Oct 2014 → 9 Oct 2014

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10.1149/06406.0359ecst

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El Kurdi, M., Prost, M., Ghrib, A., Checoury, X., Sauvage, S., Zerounian, N., Aniel, F., Beaudoin, G., Sagnes, I., Le Thanh, V., Luong, T. K. P., Chaigneau, M., Ossikovski, R., Baudot, C., Boeuf, F., & Boucaud, P. (2014). Highly-doped, highly-strained germanium and Schottky electroluminescent diodes. ECS Transactions, 64(6), 359-364. https://doi.org/10.1149/06406.0359ecst

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title = "Highly-doped, highly-strained germanium and Schottky electroluminescent diodes",

abstract = "We demonstrate that room temperature electroluminescence can be obtained from n-doped germanium layers by using a Schottky contact. The electrical and optical properties of the Schottky device are improved by inserting a thin Al2O3 interfacial barrier. We also show that high active doping of Ge grown on Si can be obtained by molecular beam epitaxy by using a co-doping method with Sb and P. We finally discuss the transfer of tensile strain on microdisk resonators using silicon nitride stressor layers.",

author = "\{El Kurdi\}, M. and M. Prost and A. Ghrib and X. Checoury and S. Sauvage and N. Zerounian and F. Aniel and G. Beaudoin and I. Sagnes and \{Le Thanh\}, V. and Luong, \{T. K.P.\} and M. Chaigneau and R. Ossikovski and C. Baudot and F. Boeuf and P. Boucaud",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting ; Conference date: 05-10-2014 Through 09-10-2014",

year = "2014",

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day = "1",

doi = "10.1149/06406.0359ecst",

language = "English",

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TY - JOUR

T1 - Highly-doped, highly-strained germanium and Schottky electroluminescent diodes

AU - El Kurdi, M.

AU - Prost, M.

AU - Ghrib, A.

AU - Checoury, X.

AU - Sauvage, S.

AU - Zerounian, N.

AU - Aniel, F.

AU - Beaudoin, G.

AU - Sagnes, I.

AU - Le Thanh, V.

AU - Luong, T. K.P.

AU - Chaigneau, M.

AU - Ossikovski, R.

AU - Baudot, C.

AU - Boeuf, F.

AU - Boucaud, P.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We demonstrate that room temperature electroluminescence can be obtained from n-doped germanium layers by using a Schottky contact. The electrical and optical properties of the Schottky device are improved by inserting a thin Al2O3 interfacial barrier. We also show that high active doping of Ge grown on Si can be obtained by molecular beam epitaxy by using a co-doping method with Sb and P. We finally discuss the transfer of tensile strain on microdisk resonators using silicon nitride stressor layers.

AB - We demonstrate that room temperature electroluminescence can be obtained from n-doped germanium layers by using a Schottky contact. The electrical and optical properties of the Schottky device are improved by inserting a thin Al2O3 interfacial barrier. We also show that high active doping of Ge grown on Si can be obtained by molecular beam epitaxy by using a co-doping method with Sb and P. We finally discuss the transfer of tensile strain on microdisk resonators using silicon nitride stressor layers.

UR - https://www.scopus.com/pages/publications/84921321379

U2 - 10.1149/06406.0359ecst

DO - 10.1149/06406.0359ecst

M3 - Conference article

AN - SCOPUS:84921321379

SN - 1938-5862

VL - 64

SP - 359

EP - 364

JO - ECS Transactions

JF - ECS Transactions

IS - 6

T2 - 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting

Y2 - 5 October 2014 through 9 October 2014

ER -

Highly-doped, highly-strained germanium and Schottky electroluminescent diodes

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