Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μ m

T. Sadeev; H. Huang; D. Arsenijević; K. Schires; F. Grillot; D. Bimberg

doi:10.1063/1.4935796

Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μ m

T. Sadeev, H. Huang, D. Arsenijević, K. Schires, F. Grillot, D. Bimberg

Research output: Contribution to journal › Article › peer-review

Abstract

This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of -18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ⁽³⁾/g₀ of ∼4 × 10^-19 m³/V³ are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carrier populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ⁽³⁾/g₀ compared to quantum dash lasers.

Original language	English
Article number	191111
Journal	Applied Physics Letters
Volume	107
Issue number	19
DOIs	https://doi.org/10.1063/1.4935796
Publication status	Published - 9 Nov 2015
Externally published	Yes

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title = "Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μ m",

abstract = "This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of -18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ(3)/g0 of ∼4 × 10-19 m3/V3 are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carrier populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ(3)/g0 compared to quantum dash lasers.",

author = "T. Sadeev and H. Huang and D. Arsenijevi{\'c} and K. Schires and F. Grillot and D. Bimberg",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

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doi = "10.1063/1.4935796",

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AU - Sadeev, T.

AU - Huang, H.

AU - Arsenijević, D.

AU - Schires, K.

AU - Grillot, F.

AU - Bimberg, D.

PY - 2015/11/9

Y1 - 2015/11/9

N2 - This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of -18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ(3)/g0 of ∼4 × 10-19 m3/V3 are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carrier populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ(3)/g0 compared to quantum dash lasers.

AB - This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of -18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ(3)/g0 of ∼4 × 10-19 m3/V3 are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carrier populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ(3)/g0 compared to quantum dash lasers.

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DO - 10.1063/1.4935796

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Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μ m

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