Hot carriers and thermalization properties of type-II in As/AlAsSb MQW and superlattice solar cells

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Thermalization of photo-generated hot carriers via phonon mediated relaxation pathways is one of the main loss mechanisms in photovoltaic devices. Energy loss via hot carrier thermalization can be suppressed if the exchanged energy between hot carriers and phonons (mainly optical in polar semiconductors) is not transferred to low energy acoustic phonons (heat dissipation). In this study, the effects of barrier thickness in thermalization of hot carriers of InAs multi-quantum well (MQW) type-II structures are investigated. Experimental and theoretical results indicate that by increasing the thickness of the barrier - the hot carrier thermalization reduces. This effect is associated with the reduction of the Klemens mechanism via the increase of the phononic bandgap in the structure of the superlattice.

Original languageEnglish
Title of host publication2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1131-1133
Number of pages3
ISBN (Electronic)9781665419222
DOIs
Publication statusPublished - 20 Jun 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: 20 Jun 202125 Jun 2021

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale
Period20/06/2125/06/21

Keywords

  • Klemens mechanism
  • hot carriers
  • phonons engineering
  • thermalization coefficient

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