Hot electron transport in 3-terminal devices based on magnetic tunnel junctions

daniel Lacour; michel Hehn; françois Montaigne; henri Jaffrès; peter Rottländer; frederic Nguyen Van Dau; frederic Petroff; alain Schuhl

Hot electron transport in 3-terminal devices based on magnetic tunnel junctions

daniel Lacour, michel Hehn, françois Montaigne, henri Jaffrès, peter Rottländer, frederic Nguyen Van Dau, frederic Petroff, alain Schuhl

Research output: Contribution to journal › Conference article › peer-review

Abstract

Hot electron transport in 3-terminal devices based on magnetic tunnel junctions was discussed. Magnetic field dependent electrical characteristics of magnetic tunnel junction were investigated. Results showed that the control of the hot electron transmission in a double tunnel junction is the keystone to ensure asymmetric diodes or hot electron magnetic field dependent transistors.

Original language	English
Pages (from-to)	ER04
Journal	Digests of the Intermag Conference
Publication status	Published - 1 Dec 2002
Externally published	Yes
Event	2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands Duration: 28 Apr 2002 → 2 May 2002

Cite this

@article{dba8927c691f44438c57105c3adbe012,

title = "Hot electron transport in 3-terminal devices based on magnetic tunnel junctions",

abstract = "Hot electron transport in 3-terminal devices based on magnetic tunnel junctions was discussed. Magnetic field dependent electrical characteristics of magnetic tunnel junction were investigated. Results showed that the control of the hot electron transmission in a double tunnel junction is the keystone to ensure asymmetric diodes or hot electron magnetic field dependent transistors.",

author = "daniel Lacour and michel Hehn and fran{\c c}ois Montaigne and henri Jaffr{\`e}s and peter Rottl{\"a}nder and \{Nguyen Van Dau\}, frederic and frederic Petroff and alain Schuhl",

year = "2002",

month = dec,

day = "1",

language = "English",

pages = "ER04",

journal = "Digests of the Intermag Conference",

issn = "0074-6843",

note = "2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG ; Conference date: 28-04-2002 Through 02-05-2002",

}

TY - JOUR

T1 - Hot electron transport in 3-terminal devices based on magnetic tunnel junctions

AU - Lacour, daniel

AU - Hehn, michel

AU - Montaigne, françois

AU - Jaffrès, henri

AU - Rottländer, peter

AU - Nguyen Van Dau, frederic

AU - Petroff, frederic

AU - Schuhl, alain

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Hot electron transport in 3-terminal devices based on magnetic tunnel junctions was discussed. Magnetic field dependent electrical characteristics of magnetic tunnel junction were investigated. Results showed that the control of the hot electron transmission in a double tunnel junction is the keystone to ensure asymmetric diodes or hot electron magnetic field dependent transistors.

AB - Hot electron transport in 3-terminal devices based on magnetic tunnel junctions was discussed. Magnetic field dependent electrical characteristics of magnetic tunnel junction were investigated. Results showed that the control of the hot electron transmission in a double tunnel junction is the keystone to ensure asymmetric diodes or hot electron magnetic field dependent transistors.

M3 - Conference article

AN - SCOPUS:0036907969

SN - 0074-6843

SP - ER04

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

T2 - 2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG

Y2 - 28 April 2002 through 2 May 2002

ER -

Hot electron transport in 3-terminal devices based on magnetic tunnel junctions

Abstract

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