Hydrogen plasma treatment of silicon surfaces studied by in-situ spectroscopic ellipsometry

P. Raynaud; J. P. Booth; C. Pomot

doi:10.1016/0169-4332(90)90185-3

Hydrogen plasma treatment of silicon surfaces studied by in-situ spectroscopic ellipsometry

P. Raynaud
, J. P. Booth
, C. Pomot

Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

Abstract

The use of H₂ and Ar plasmas for the cleaning of crystalline Si surfaces has been investigated by in-situ spectroscopic ellipsometry (SE), LEED and Auger spectroscopy. H₂ plasma treatment, followed by annealing at 700°C to desorb the adsorbed hydrogen, was found to produce high-quality clean crystalline surface. SE was shown to be sensitive not only to surface oxide layers and micro-roughness, but also to monolayer adsorption of hydrogen. The desorption of hydrogen as a function of temperature from H₂ plasma treated Si(100) and Si(111) surfaces was investigated. The presence of different phases of adsorbed hydrogen is distinguished by SE, in agreement with UPS and EELS studies. The clean (plasma treated and annealed) Si(100) and Si(111) surfaces show differences in their apparent dielectric constants, which may be due to the nature of the surface reconstruction.

Original language	English
Pages (from-to)	435-440
Number of pages	6
Journal	Applied Surface Science
Volume	46
Issue number	1-4
DOIs	https://doi.org/10.1016/0169-4332(90)90185-3
Publication status	Published - 2 Dec 1990

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title = "Hydrogen plasma treatment of silicon surfaces studied by in-situ spectroscopic ellipsometry",

abstract = "The use of H2 and Ar plasmas for the cleaning of crystalline Si surfaces has been investigated by in-situ spectroscopic ellipsometry (SE), LEED and Auger spectroscopy. H2 plasma treatment, followed by annealing at 700°C to desorb the adsorbed hydrogen, was found to produce high-quality clean crystalline surface. SE was shown to be sensitive not only to surface oxide layers and micro-roughness, but also to monolayer adsorption of hydrogen. The desorption of hydrogen as a function of temperature from H2 plasma treated Si(100) and Si(111) surfaces was investigated. The presence of different phases of adsorbed hydrogen is distinguished by SE, in agreement with UPS and EELS studies. The clean (plasma treated and annealed) Si(100) and Si(111) surfaces show differences in their apparent dielectric constants, which may be due to the nature of the surface reconstruction.",

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year = "1990",

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doi = "10.1016/0169-4332(90)90185-3",

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T1 - Hydrogen plasma treatment of silicon surfaces studied by in-situ spectroscopic ellipsometry

AU - Raynaud, P.

AU - Booth, J. P.

AU - Pomot, C.

PY - 1990/12/2

Y1 - 1990/12/2

N2 - The use of H2 and Ar plasmas for the cleaning of crystalline Si surfaces has been investigated by in-situ spectroscopic ellipsometry (SE), LEED and Auger spectroscopy. H2 plasma treatment, followed by annealing at 700°C to desorb the adsorbed hydrogen, was found to produce high-quality clean crystalline surface. SE was shown to be sensitive not only to surface oxide layers and micro-roughness, but also to monolayer adsorption of hydrogen. The desorption of hydrogen as a function of temperature from H2 plasma treated Si(100) and Si(111) surfaces was investigated. The presence of different phases of adsorbed hydrogen is distinguished by SE, in agreement with UPS and EELS studies. The clean (plasma treated and annealed) Si(100) and Si(111) surfaces show differences in their apparent dielectric constants, which may be due to the nature of the surface reconstruction.

AB - The use of H2 and Ar plasmas for the cleaning of crystalline Si surfaces has been investigated by in-situ spectroscopic ellipsometry (SE), LEED and Auger spectroscopy. H2 plasma treatment, followed by annealing at 700°C to desorb the adsorbed hydrogen, was found to produce high-quality clean crystalline surface. SE was shown to be sensitive not only to surface oxide layers and micro-roughness, but also to monolayer adsorption of hydrogen. The desorption of hydrogen as a function of temperature from H2 plasma treated Si(100) and Si(111) surfaces was investigated. The presence of different phases of adsorbed hydrogen is distinguished by SE, in agreement with UPS and EELS studies. The clean (plasma treated and annealed) Si(100) and Si(111) surfaces show differences in their apparent dielectric constants, which may be due to the nature of the surface reconstruction.

U2 - 10.1016/0169-4332(90)90185-3

DO - 10.1016/0169-4332(90)90185-3

M3 - Article

AN - SCOPUS:0025545375

SN - 0169-4332

VL - 46

SP - 435

EP - 440

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Hydrogen plasma treatment of silicon surfaces studied by in-situ spectroscopic ellipsometry

Abstract

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