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Image acceleration of highly charged ions on metal, semiconductor, and insulator surfaces

  • J. P. Briand
  • , S. Thuriez
  • , G. Giardino
  • , G. Borsoni
  • , V. Le Roux
  • , M. Froment
  • , M. Eddrief
  • , C. de Villeneuve
  • , B. D'Etat-Ban
  • , C. Sébenne
  • Sorbonne Université

Research output: Contribution to journalArticlepeer-review

Abstract

Very slow, highly charged ions impinging on metal surfaces are known to be accelerated by their image and to drop irremediably on the surfaces which they touch or slightly penetrate. We present experiments which demonstrate that above insulators or semiconductors, at normal incidence, the ions are backscattered at a certain distance from the surface and do not touch it. This finding is explained by the transient buildup of positive charges due to the removal of valence electrons, which overcome the acceleration of the ion by its own image. This effect is found to cancel out at grazing incidence.

Original languageEnglish
Pages (from-to)R2523-R2526
JournalPhysical Review A - Atomic, Molecular, and Optical Physics
Volume55
Issue number4
DOIs
Publication statusPublished - 1 Jan 1997

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