Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

Negar Naghavi; Thibaud Hildebrandt; Muriel Bouttemy; Arnaud Etcheberry; Daniel Lincot

doi:10.1117/12.2223151

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se₂/Zn(S,O)-based solar cell

Negar Naghavi
, Thibaud Hildebrandt
, Muriel Bouttemy
, Arnaud Etcheberry
, Daniel Lincot

Institut Photovoltaïque d'Ile-de-France
Université Versailles-Saint Quentin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

The highest and most reproducible (Cu(In,Ga)Se₂ (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn(S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se₂-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers: a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as Zn_xMg_yO or Zn_xSn_yO on the stability and performance of these solar cells.

Original language	English
Title of host publication	Oxide-Based Materials and Devices VII
Editors	David C. Look, Ferechteh H. Teherani, David J. Rogers
Publisher	SPIE
ISBN (Electronic)	9781628419849
DOIs	https://doi.org/10.1117/12.2223151
Publication status	Published - 1 Jan 2016
Event	Oxide-Based Materials and Devices VII - San Francisco, United States Duration: 14 Feb 2016 → 17 Feb 2016

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9749
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Oxide-Based Materials and Devices VII
Country/Territory	United States
City	San Francisco
Period	14/02/16 → 17/02/16

Keywords

CIGSe solar cells
Zn(S,O)
chemical bath deposition
intrinsic layers
metastability

Access to Document

10.1117/12.2223151

Cite this

Naghavi, N., Hildebrandt, T., Bouttemy, M., Etcheberry, A., & Lincot, D. (2016). Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se₂/Zn(S,O)-based solar cell. In D. C. Look, F. H. Teherani, & D. J. Rogers (Eds.), Oxide-Based Materials and Devices VII Article 97491I (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9749). SPIE. https://doi.org/10.1117/12.2223151

Naghavi, Negar ; Hildebrandt, Thibaud ; Bouttemy, Muriel et al. / Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se₂/Zn(S,O)-based solar cell. Oxide-Based Materials and Devices VII. editor / David C. Look ; Ferechteh H. Teherani ; David J. Rogers. SPIE, 2016. (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell",

abstract = "The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn(S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3\%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers: a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.",

keywords = "CIGSe solar cells, Zn(S,O), chemical bath deposition, intrinsic layers, metastability",

author = "Negar Naghavi and Thibaud Hildebrandt and Muriel Bouttemy and Arnaud Etcheberry and Daniel Lincot",

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Naghavi, N, Hildebrandt, T, Bouttemy, M, Etcheberry, A & Lincot, D 2016, Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se₂/Zn(S,O)-based solar cell. in DC Look, FH Teherani & DJ Rogers (eds), Oxide-Based Materials and Devices VII., 97491I, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9749, SPIE, Oxide-Based Materials and Devices VII, San Francisco, United States, 14/02/16. https://doi.org/10.1117/12.2223151

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se₂/Zn(S,O)-based solar cell. / Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel et al.
Oxide-Based Materials and Devices VII. ed. / David C. Look; Ferechteh H. Teherani; David J. Rogers. SPIE, 2016. 97491I (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9749).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

AU - Naghavi, Negar

AU - Hildebrandt, Thibaud

AU - Bouttemy, Muriel

AU - Etcheberry, Arnaud

AU - Lincot, Daniel

PY - 2016/1/1

Y1 - 2016/1/1

N2 - The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn(S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers: a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

AB - The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn(S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers: a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

KW - CIGSe solar cells

KW - Zn(S,O)

KW - chemical bath deposition

KW - intrinsic layers

KW - metastability

U2 - 10.1117/12.2223151

DO - 10.1117/12.2223151

M3 - Conference contribution

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices VII

A2 - Look, David C.

A2 - Teherani, Ferechteh H.

A2 - Rogers, David J.

PB - SPIE

T2 - Oxide-Based Materials and Devices VII

Y2 - 14 February 2016 through 17 February 2016

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Naghavi N, Hildebrandt T, Bouttemy M, Etcheberry A, Lincot D. Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se₂/Zn(S,O)-based solar cell. In Look DC, Teherani FH, Rogers DJ, editors, Oxide-Based Materials and Devices VII. SPIE. 2016. 97491I. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2223151