TY - GEN
T1 - Impact of the excitation wavelength on the properties of photo-generated hot carriers in InGaAs MQW
AU - Esmaielpour, Hamidreza
AU - Giteau, Maxime
AU - Guillemoles, Jean Francois
AU - Suchet, Daniel
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/20
Y1 - 2021/6/20
N2 - Suppersion of phonon-mediated hot carrier themalization can boost the efficiency of solar cells above the Shockley-Quesseir limit. To design hot carrier absorbers with inhibited thermalization loss, the properties of hot carriers in the system must be further investigated. Here, the impact of the excitation wavelength on hot carrier properties in an InGaAs MQW structure at various lattice temperatures and excitation intensities is studied. It is observed that the temperature of hot carriers for a given photon flux is significantly larger for a shorter excitation wavelength, however, by considering the thermalized power above the absorber band edge, the temperature of hot carriers changes with similar behavior for the various excitation wavelengths, indicating a unique thermalization coefficient for the system. Similar effect is also observed in thin GaAs absorbers. Moreover, the impacts of excitation wavelength on the quasi-Fermi level splitting and the spectral linewidth broadening of the radiation are investigated.
AB - Suppersion of phonon-mediated hot carrier themalization can boost the efficiency of solar cells above the Shockley-Quesseir limit. To design hot carrier absorbers with inhibited thermalization loss, the properties of hot carriers in the system must be further investigated. Here, the impact of the excitation wavelength on hot carrier properties in an InGaAs MQW structure at various lattice temperatures and excitation intensities is studied. It is observed that the temperature of hot carriers for a given photon flux is significantly larger for a shorter excitation wavelength, however, by considering the thermalized power above the absorber band edge, the temperature of hot carriers changes with similar behavior for the various excitation wavelengths, indicating a unique thermalization coefficient for the system. Similar effect is also observed in thin GaAs absorbers. Moreover, the impacts of excitation wavelength on the quasi-Fermi level splitting and the spectral linewidth broadening of the radiation are investigated.
KW - Hot carriers
KW - excitation wavelength
KW - optical phonons
KW - photoluminescence
KW - thermalization mechanism
U2 - 10.1109/PVSC43889.2021.9518621
DO - 10.1109/PVSC43889.2021.9518621
M3 - Conference contribution
AN - SCOPUS:85115961114
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2005
EP - 2007
BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Y2 - 20 June 2021 through 25 June 2021
ER -