Impacts of carrier capture and relaxation rates on the modulation response of injection-locked quantum dot lasers

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Taking into account the carrier dynamics in the wetting layer, excited state and the ground state, the intensity modulation properties of an injection-locked quantum dot laser are studied theoretically through a semi-analytical approach. It is demonstrated that both high carrier capture and relaxation rates enhance the modulation bandwidth as well as the resonance-peak amplitude. Moreover, the pre-resonance dip arising under positive detuning can be eliminated as well, which is beneficial for further bandwidth enhancement. It is also found that a large capture time reduces both the resonance frequency and the damping factor while both are increased by a large relaxation time.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XXI
DOIs
Publication statusPublished - 29 May 2013
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices XXI - San Francisco, CA, United States
Duration: 4 Feb 20137 Feb 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8619
ISSN (Print)0277-786X

Conference

ConferencePhysics and Simulation of Optoelectronic Devices XXI
Country/TerritoryUnited States
CitySan Francisco, CA
Period4/02/137/02/13

Keywords

  • injection-locking
  • nonlinear dynamics
  • quantum dot
  • semiconductor laser

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