Importance of interface sampling for extraordinary effects in metal semiconductor hybrids

A. C.H. Rowe, S. A. Solin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Large changes in the resistance of metal semiconductor hybrids at 300 K under either magnetic field or tensile strain have been ascribed to the manner in which the injected current samples the interface between the metallic and semiconducting parts of the hybrid. Here we numerically solve Laplace's equation for symmetric circular geometry hybrids in which the local resistivity is perturbed, and we show that the interface is maximally sampled by the injected current in geometries which yield the largest extraordinary resistance change, and in which there is an observed change from semiconductor-like to metal-like conduction.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages477-478
Number of pages2
DOIs
Publication statusPublished - 30 Jun 2005
Externally publishedYes
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

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