Improved chemical and electrical stability of gold silicon contacts via epitaxial electrodeposition

Azadeh Akhtari-Zavareh; Wenjie Li; Fouad Maroun; Philippe Allongue; Karen L. Kavanagh

doi:10.1063/1.4792000

Improved chemical and electrical stability of gold silicon contacts via epitaxial electrodeposition

Azadeh Akhtari-Zavareh
, Wenjie Li
, Fouad Maroun
, Philippe Allongue
, Karen L. Kavanagh

Simon Fraser University

Research output: Contribution to journal › Article › peer-review

Abstract

The ballistic transport and junction stability of epitaxial Au, grown on Si (111) and (001) substrates via electrodeposition, have been investigated as a function of Au thickness (6.7-14.1 nm). Scanning tunneling microscopy (STM) with ballistic emission electron microscopy (BEEM) showed hot electron transmission for diodes with Au thicknesses greater than 7 nm, whereas for thinner samples surface or interfacial oxidation meant that macroscopic current-voltage characteristics gave high barrier heights (0.8 eV) but no detectable BEEM transport at room temperature. Diodes that remained electrically stable for several months after exposure to air also show an atomically abrupt and epitaxial Au/Si interface via cross-sectional transmission electron microscopy. Degradation in rectifying diode properties through surface or interfacial reactions is indicated by poorer STM images and decreasing or no BEEM transmission, correlated with the formation of a continuous interfacial layer.

Original language	English
Article number	063708
Journal	Journal of Applied Physics
Volume	113
Issue number	6
DOIs	https://doi.org/10.1063/1.4792000
Publication status	Published - 14 Feb 2013

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title = "Improved chemical and electrical stability of gold silicon contacts via epitaxial electrodeposition",

abstract = "The ballistic transport and junction stability of epitaxial Au, grown on Si (111) and (001) substrates via electrodeposition, have been investigated as a function of Au thickness (6.7-14.1 nm). Scanning tunneling microscopy (STM) with ballistic emission electron microscopy (BEEM) showed hot electron transmission for diodes with Au thicknesses greater than 7 nm, whereas for thinner samples surface or interfacial oxidation meant that macroscopic current-voltage characteristics gave high barrier heights (0.8 eV) but no detectable BEEM transport at room temperature. Diodes that remained electrically stable for several months after exposure to air also show an atomically abrupt and epitaxial Au/Si interface via cross-sectional transmission electron microscopy. Degradation in rectifying diode properties through surface or interfacial reactions is indicated by poorer STM images and decreasing or no BEEM transmission, correlated with the formation of a continuous interfacial layer.",

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AU - Akhtari-Zavareh, Azadeh

AU - Li, Wenjie

AU - Maroun, Fouad

AU - Allongue, Philippe

AU - Kavanagh, Karen L.

PY - 2013/2/14

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AB - The ballistic transport and junction stability of epitaxial Au, grown on Si (111) and (001) substrates via electrodeposition, have been investigated as a function of Au thickness (6.7-14.1 nm). Scanning tunneling microscopy (STM) with ballistic emission electron microscopy (BEEM) showed hot electron transmission for diodes with Au thicknesses greater than 7 nm, whereas for thinner samples surface or interfacial oxidation meant that macroscopic current-voltage characteristics gave high barrier heights (0.8 eV) but no detectable BEEM transport at room temperature. Diodes that remained electrically stable for several months after exposure to air also show an atomically abrupt and epitaxial Au/Si interface via cross-sectional transmission electron microscopy. Degradation in rectifying diode properties through surface or interfacial reactions is indicated by poorer STM images and decreasing or no BEEM transmission, correlated with the formation of a continuous interfacial layer.

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DO - 10.1063/1.4792000

M3 - Article

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SN - 0021-8979

VL - 113

JO - Journal of Applied Physics

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Improved chemical and electrical stability of gold silicon contacts via epitaxial electrodeposition

Abstract

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