Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

I. Martín; M. Vetter; A. Orpella; C. Voz; J. Puigdollers; R. Alcubilla; A. V. Kharchenko; P. Roca i Cabarrocas

doi:10.1063/1.1647702

Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

I. Martín
, M. Vetter
, A. Orpella
, C. Voz
, J. Puigdollers
, R. Alcubilla
, A. V. Kharchenko
, P. Roca i Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

The improvement of silicon surface passivation was discussed. The use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide deposition, was studied. The dependence lifetime of crystalline silicon was measured through a quasi-steady photoconductance technique. It was found that the the hydrogen plasma treatment improved surface passivation compared to HF dip.

Original language	English
Pages (from-to)	1474-1476
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	9
DOIs	https://doi.org/10.1063/1.1647702
Publication status	Published - 1 Mar 2004

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title = "Improvement of crystalline silicon surface passivation by hydrogen plasma treatment",

abstract = "The improvement of silicon surface passivation was discussed. The use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide deposition, was studied. The dependence lifetime of crystalline silicon was measured through a quasi-steady photoconductance technique. It was found that the the hydrogen plasma treatment improved surface passivation compared to HF dip.",

author = "I. Mart{\'i}n and M. Vetter and A. Orpella and C. Voz and J. Puigdollers and R. Alcubilla and Kharchenko, \{A. V.\} and \{Roca i Cabarrocas\}, P.",

year = "2004",

month = mar,

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doi = "10.1063/1.1647702",

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volume = "84",

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T1 - Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

AU - Martín, I.

AU - Vetter, M.

AU - Orpella, A.

AU - Voz, C.

AU - Puigdollers, J.

AU - Alcubilla, R.

AU - Kharchenko, A. V.

AU - Roca i Cabarrocas, P.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - The improvement of silicon surface passivation was discussed. The use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide deposition, was studied. The dependence lifetime of crystalline silicon was measured through a quasi-steady photoconductance technique. It was found that the the hydrogen plasma treatment improved surface passivation compared to HF dip.

AB - The improvement of silicon surface passivation was discussed. The use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide deposition, was studied. The dependence lifetime of crystalline silicon was measured through a quasi-steady photoconductance technique. It was found that the the hydrogen plasma treatment improved surface passivation compared to HF dip.

U2 - 10.1063/1.1647702

DO - 10.1063/1.1647702

M3 - Article

AN - SCOPUS:1642603983

SN - 0003-6951

VL - 84

SP - 1474

EP - 1476

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

Abstract

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