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In-Plane Self-Turning and Twin Dynamics Renders Large Stretchability to Mono-Like Zigzag Silicon Nanowire Springs

  • Zhaoguo Xue
  • , Mingkun Xu
  • , Xing Li
  • , Jimmy Wang
  • , Xiaofan Jiang
  • , Xianlong Wei
  • , Linwei Yu
  • , Qing Chen
  • , Junzhuan Wang
  • , Jun Xu
  • , Yi Shi
  • , Kunji Chen
  • , Pere Roca i Cabarrocas
  • Nanjing University
  • Tsinghua University
  • Université Paris-Saclay

Research output: Contribution to journalArticlepeer-review

Abstract

Crystalline Si nanowire (SiNW) springs, produced via a low temperature (<350 °C) thin film technology, are ideal building blocks for stretchable electronics. Herein, a novel cyclic crystallographic-index-lowering self-turning and twin dynamics is reported, during a tin-catalyzed in-plane growth of SiNWs, which results in a periodic zigzag SiNW without any external parametric intervention. More interestingly, a unique twin-reflected interlaced crystal-domain structure has been identified for the first time, while in situ and real-time scanning electron microscopy observations reveal a new twin-triggering growth mechanism that is the key to reset a complete zigzag growth cycle. Direct “stress–strain” testing of the SiNW springs demonstrates a large stretchability of 12% under tensile loading, indicating a whole new strategy and capability to engineer mono-like SiNW channels for high performance stretchable electronics.

Original languageEnglish
Pages (from-to)5352-5359
Number of pages8
JournalAdvanced Functional Materials
Volume26
Issue number29
DOIs
Publication statusPublished - 2 Aug 2016
Externally publishedYes

Keywords

  • cyclic self-turning and twinning
  • in situ growth and observation
  • in-plane growth
  • silicon nanowire spring

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