Abstract
Crystalline Si nanowire (SiNW) springs, produced via a low temperature (<350 °C) thin film technology, are ideal building blocks for stretchable electronics. Herein, a novel cyclic crystallographic-index-lowering self-turning and twin dynamics is reported, during a tin-catalyzed in-plane growth of SiNWs, which results in a periodic zigzag SiNW without any external parametric intervention. More interestingly, a unique twin-reflected interlaced crystal-domain structure has been identified for the first time, while in situ and real-time scanning electron microscopy observations reveal a new twin-triggering growth mechanism that is the key to reset a complete zigzag growth cycle. Direct “stress–strain” testing of the SiNW springs demonstrates a large stretchability of 12% under tensile loading, indicating a whole new strategy and capability to engineer mono-like SiNW channels for high performance stretchable electronics.
| Original language | English |
|---|---|
| Pages (from-to) | 5352-5359 |
| Number of pages | 8 |
| Journal | Advanced Functional Materials |
| Volume | 26 |
| Issue number | 29 |
| DOIs | |
| Publication status | Published - 2 Aug 2016 |
| Externally published | Yes |
Keywords
- cyclic self-turning and twinning
- in situ growth and observation
- in-plane growth
- silicon nanowire spring
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