In situ characterization of the p-Si/NH4F interface during dissolution in the current oscillations regime

S. Cattarin; J. N. Chazalviel; C. Da Fonseca; F. Ozanam; L. M. Peter; G. Schlichthörl; J. Stumper

doi:10.1149/1.1838292

In situ characterization of the p-Si/NH₄F interface during dissolution in the current oscillations regime

S. Cattarin
, J. N. Chazalviel
, C. Da Fonseca
, F. Ozanam
, L. M. Peter
, G. Schlichthörl
, J. Stumper

Research output: Contribution to journal › Article › peer-review

Abstract

Several physicochemical properties of the p-Si/NH₄F interface have been monitored by in situ techniques in the regime of current oscillations. Comparison of evolution of infrared absorption, microwave reflectivity, electrode admittance, hydrogen evolution, and electron injection rate shows interesting correlations. An integrated description of the processes involved is attempted on the basis of the current models for the Si/acidic fluoride interface.

Original language	English
Pages (from-to)	498-502
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	145
Issue number	2
DOIs	https://doi.org/10.1149/1.1838292
Publication status	Published - 1 Jan 1998

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1149/1.1838292

Cite this

@article{5cf71d2b89414e8bac58da3293da1577,

title = "In situ characterization of the p-Si/NH4F interface during dissolution in the current oscillations regime",

abstract = "Several physicochemical properties of the p-Si/NH4F interface have been monitored by in situ techniques in the regime of current oscillations. Comparison of evolution of infrared absorption, microwave reflectivity, electrode admittance, hydrogen evolution, and electron injection rate shows interesting correlations. An integrated description of the processes involved is attempted on the basis of the current models for the Si/acidic fluoride interface.",

author = "S. Cattarin and Chazalviel, \{J. N.\} and \{Da Fonseca\}, C. and F. Ozanam and Peter, \{L. M.\} and G. Schlichth{\"o}rl and J. Stumper",

year = "1998",

month = jan,

day = "1",

doi = "10.1149/1.1838292",

language = "English",

volume = "145",

pages = "498--502",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

number = "2",

}

TY - JOUR

T1 - In situ characterization of the p-Si/NH4F interface during dissolution in the current oscillations regime

AU - Cattarin, S.

AU - Chazalviel, J. N.

AU - Da Fonseca, C.

AU - Ozanam, F.

AU - Peter, L. M.

AU - Schlichthörl, G.

AU - Stumper, J.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Several physicochemical properties of the p-Si/NH4F interface have been monitored by in situ techniques in the regime of current oscillations. Comparison of evolution of infrared absorption, microwave reflectivity, electrode admittance, hydrogen evolution, and electron injection rate shows interesting correlations. An integrated description of the processes involved is attempted on the basis of the current models for the Si/acidic fluoride interface.

AB - Several physicochemical properties of the p-Si/NH4F interface have been monitored by in situ techniques in the regime of current oscillations. Comparison of evolution of infrared absorption, microwave reflectivity, electrode admittance, hydrogen evolution, and electron injection rate shows interesting correlations. An integrated description of the processes involved is attempted on the basis of the current models for the Si/acidic fluoride interface.

UR - https://www.scopus.com/pages/publications/0031996606

U2 - 10.1149/1.1838292

DO - 10.1149/1.1838292

M3 - Article

AN - SCOPUS:0031996606

SN - 0013-4651

VL - 145

SP - 498

EP - 502

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 2

ER -

In situ characterization of the p-Si/NH₄F interface during dissolution in the current oscillations regime

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this