In situ infrared characterization of the silicon surface in hydrofluoric acid

J. N. Chazalviel; F. Ozanam

doi:10.1063/1.365348

In situ infrared characterization of the silicon surface in hydrofluoric acid

J. N. Chazalviel
, F. Ozanam

Research output: Contribution to journal › Article › peer-review

Abstract

The surface of silicon in hydroflouric acid (HF) is coated with covalently attached hydrogen (SiH_x groups, with x = 1,2,3), with probably a very small concentration of SiF bonds. In contrast with a recent claim by Niwano et al. [J. Appl. Phys. 79, 3708 (1996)], we show that the concentration of SiF bonds is as yet beyond infrared detection limits. Our analysis indicates that the band at 2230 cm^-1 observed by these authors actually arises from electrolyte absorption.

Original language	English
Pages (from-to)	7684-7686
Number of pages	3
Journal	Journal of Applied Physics
Volume	81
Issue number	11
DOIs	https://doi.org/10.1063/1.365348
Publication status	Published - 1 Jun 1997

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@article{8636d8004eb945b28604f511656b652b,

title = "In situ infrared characterization of the silicon surface in hydrofluoric acid",

abstract = "The surface of silicon in hydroflouric acid (HF) is coated with covalently attached hydrogen (SiHx groups, with x = 1,2,3), with probably a very small concentration of SiF bonds. In contrast with a recent claim by Niwano et al. [J. Appl. Phys. 79, 3708 (1996)], we show that the concentration of SiF bonds is as yet beyond infrared detection limits. Our analysis indicates that the band at 2230 cm-1 observed by these authors actually arises from electrolyte absorption.",

author = "Chazalviel, \{J. N.\} and F. Ozanam",

year = "1997",

month = jun,

day = "1",

doi = "10.1063/1.365348",

language = "English",

volume = "81",

pages = "7684--7686",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "11",

}

TY - JOUR

T1 - In situ infrared characterization of the silicon surface in hydrofluoric acid

AU - Chazalviel, J. N.

AU - Ozanam, F.

PY - 1997/6/1

Y1 - 1997/6/1

N2 - The surface of silicon in hydroflouric acid (HF) is coated with covalently attached hydrogen (SiHx groups, with x = 1,2,3), with probably a very small concentration of SiF bonds. In contrast with a recent claim by Niwano et al. [J. Appl. Phys. 79, 3708 (1996)], we show that the concentration of SiF bonds is as yet beyond infrared detection limits. Our analysis indicates that the band at 2230 cm-1 observed by these authors actually arises from electrolyte absorption.

AB - The surface of silicon in hydroflouric acid (HF) is coated with covalently attached hydrogen (SiHx groups, with x = 1,2,3), with probably a very small concentration of SiF bonds. In contrast with a recent claim by Niwano et al. [J. Appl. Phys. 79, 3708 (1996)], we show that the concentration of SiF bonds is as yet beyond infrared detection limits. Our analysis indicates that the band at 2230 cm-1 observed by these authors actually arises from electrolyte absorption.

U2 - 10.1063/1.365348

DO - 10.1063/1.365348

M3 - Article

AN - SCOPUS:0000994368

SN - 0021-8979

VL - 81

SP - 7684

EP - 7686

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

In situ infrared characterization of the silicon surface in hydrofluoric acid

Abstract

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