In situ infrared ellipsometry study of the hydrogen incorporation in p-doped amorphous silicon and p-i interfaces

R. Ossikovski; B. Drévillon; J. Perrin

doi:10.1016/0022-3093(93)90503-P

In situ infrared ellipsometry study of the hydrogen incorporation in p-doped amorphous silicon and p-i interfaces

R. Ossikovski
, B. Drévillon
, J. Perrin

Institut polytechnique de Paris

Research output: Contribution to journal › Article › peer-review

Abstract

An in situ investigation of the influence of p-doping on the vibrational properties of a-Si:H, by infrared ellipsometry, is presented. The presence of B₂H₆ in the gas phase induces a catalytic effect revealed by an increase of hydrogen bonded as SiH₂ at the a-Si:H surface. This effect is interpreted in terms of surface reaction mechanisms and energetic considerations. The in situ study of p⁺ -i interfaces reveals a complicated behaviour. They arefound to be affected by the deposition sequence and the doping gas (B₂H₆ or B(CH₃)₃).

Original language	English
Pages (from-to)	107-110
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	164-166
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(93)90503-P
Publication status	Published - 2 Dec 1993

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@article{1efb094438654542bef90bc52d4526eb,

title = "In situ infrared ellipsometry study of the hydrogen incorporation in p-doped amorphous silicon and p-i interfaces",

abstract = "An in situ investigation of the influence of p-doping on the vibrational properties of a-Si:H, by infrared ellipsometry, is presented. The presence of B2H6 in the gas phase induces a catalytic effect revealed by an increase of hydrogen bonded as SiH2 at the a-Si:H surface. This effect is interpreted in terms of surface reaction mechanisms and energetic considerations. The in situ study of p+ -i interfaces reveals a complicated behaviour. They arefound to be affected by the deposition sequence and the doping gas (B2H6 or B(CH3)3).",

author = "R. Ossikovski and B. Dr{\'e}villon and J. Perrin",

year = "1993",

month = dec,

day = "2",

doi = "10.1016/0022-3093(93)90503-P",

language = "English",

volume = "164-166",

pages = "107--110",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

number = "PART 1",

}

TY - JOUR

T1 - In situ infrared ellipsometry study of the hydrogen incorporation in p-doped amorphous silicon and p-i interfaces

AU - Ossikovski, R.

AU - Drévillon, B.

AU - Perrin, J.

PY - 1993/12/2

Y1 - 1993/12/2

N2 - An in situ investigation of the influence of p-doping on the vibrational properties of a-Si:H, by infrared ellipsometry, is presented. The presence of B2H6 in the gas phase induces a catalytic effect revealed by an increase of hydrogen bonded as SiH2 at the a-Si:H surface. This effect is interpreted in terms of surface reaction mechanisms and energetic considerations. The in situ study of p+ -i interfaces reveals a complicated behaviour. They arefound to be affected by the deposition sequence and the doping gas (B2H6 or B(CH3)3).

AB - An in situ investigation of the influence of p-doping on the vibrational properties of a-Si:H, by infrared ellipsometry, is presented. The presence of B2H6 in the gas phase induces a catalytic effect revealed by an increase of hydrogen bonded as SiH2 at the a-Si:H surface. This effect is interpreted in terms of surface reaction mechanisms and energetic considerations. The in situ study of p+ -i interfaces reveals a complicated behaviour. They arefound to be affected by the deposition sequence and the doping gas (B2H6 or B(CH3)3).

U2 - 10.1016/0022-3093(93)90503-P

DO - 10.1016/0022-3093(93)90503-P

M3 - Article

AN - SCOPUS:0027906970

SN - 0022-3093

VL - 164-166

SP - 107

EP - 110

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

In situ infrared ellipsometry study of the hydrogen incorporation in p-doped amorphous silicon and p-i interfaces

Abstract

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