In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge

K. C. Mandal; F. Ozanam; J. N. Chazalviel

doi:10.1063/1.103788

In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge

K. C. Mandal
, F. Ozanam
, J. N. Chazalviel

Research output: Contribution to journal › Article › peer-review

Abstract

The electrochemical incorporation of hydrogen into n-Si and n-Ge has been studied by Fourier-transform electrochemically modulated infrared spectroscopy. Fresh (111) silicon (resp., germanium) surfaces exhibit a vibrational band at 2080 (resp., 1960) cm^-1 corresponding to a surface Si - H (resp., Ge - H) bond perpendicular to the surface. Prolonged cathodic treatment results in a new band at 2000 (resp., 1900) cm^-1. The position and polarization dependence of this band indicate that it is associated with hydrogen inside the semiconductor lattice. These observations directly show for the first time that cathodically hydrogenated samples contain a thin, disordered, and highly hydrogenated layer, which is probably responsible for the improvement of the hydrogen evolution kinetics observed on these electrodes.

Original language	English
Pages (from-to)	2788-2790
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	26
DOIs	https://doi.org/10.1063/1.103788
Publication status	Published - 1 Dec 1990

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title = "In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge",

abstract = "The electrochemical incorporation of hydrogen into n-Si and n-Ge has been studied by Fourier-transform electrochemically modulated infrared spectroscopy. Fresh (111) silicon (resp., germanium) surfaces exhibit a vibrational band at 2080 (resp., 1960) cm-1 corresponding to a surface Si - H (resp., Ge - H) bond perpendicular to the surface. Prolonged cathodic treatment results in a new band at 2000 (resp., 1900) cm-1. The position and polarization dependence of this band indicate that it is associated with hydrogen inside the semiconductor lattice. These observations directly show for the first time that cathodically hydrogenated samples contain a thin, disordered, and highly hydrogenated layer, which is probably responsible for the improvement of the hydrogen evolution kinetics observed on these electrodes.",

author = "Mandal, \{K. C.\} and F. Ozanam and Chazalviel, \{J. N.\}",

year = "1990",

month = dec,

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doi = "10.1063/1.103788",

language = "English",

volume = "57",

pages = "2788--2790",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge

AU - Mandal, K. C.

AU - Ozanam, F.

AU - Chazalviel, J. N.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - The electrochemical incorporation of hydrogen into n-Si and n-Ge has been studied by Fourier-transform electrochemically modulated infrared spectroscopy. Fresh (111) silicon (resp., germanium) surfaces exhibit a vibrational band at 2080 (resp., 1960) cm-1 corresponding to a surface Si - H (resp., Ge - H) bond perpendicular to the surface. Prolonged cathodic treatment results in a new band at 2000 (resp., 1900) cm-1. The position and polarization dependence of this band indicate that it is associated with hydrogen inside the semiconductor lattice. These observations directly show for the first time that cathodically hydrogenated samples contain a thin, disordered, and highly hydrogenated layer, which is probably responsible for the improvement of the hydrogen evolution kinetics observed on these electrodes.

AB - The electrochemical incorporation of hydrogen into n-Si and n-Ge has been studied by Fourier-transform electrochemically modulated infrared spectroscopy. Fresh (111) silicon (resp., germanium) surfaces exhibit a vibrational band at 2080 (resp., 1960) cm-1 corresponding to a surface Si - H (resp., Ge - H) bond perpendicular to the surface. Prolonged cathodic treatment results in a new band at 2000 (resp., 1900) cm-1. The position and polarization dependence of this band indicate that it is associated with hydrogen inside the semiconductor lattice. These observations directly show for the first time that cathodically hydrogenated samples contain a thin, disordered, and highly hydrogenated layer, which is probably responsible for the improvement of the hydrogen evolution kinetics observed on these electrodes.

U2 - 10.1063/1.103788

DO - 10.1063/1.103788

M3 - Article

AN - SCOPUS:0000088649

SN - 0003-6951

VL - 57

SP - 2788

EP - 2790

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge

Abstract

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