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In-situ IR spectroscopy to study anodic oxidation of Si(111) in KOH solution

  • Harold G.G. Philipsen
  • , Jean Noël Chazalviel
  • , Philippe Allongue
  • , François Ozanam
  • , John J. Kelly
  • Utrecht University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Fourier Transform Infrared (FTIR) spectroscopy was used to study in-situ the anodic oxidation of n-type Si(111) in KOH solution. Changes in surface chemistry were followed during oxide growth. The results are considered on the basis of a model developed from electrochemical measurements.

Original languageEnglish
Title of host publicationECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
PublisherElectrochemical Society Inc.
Pages481-488
Number of pages8
Edition2
ISBN (Electronic)9781566775519
ISBN (Print)9781566775519
DOIs
Publication statusPublished - 1 Jan 2007
Event46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States
Duration: 6 May 200710 May 2007

Publication series

NameECS Transactions
Number2
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
Country/TerritoryUnited States
CityChicago, IL
Period6/05/0710/05/07

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