In situ kinetic analysis of SiC filaments CVD

O. Féron; G. Chollon; F. Dartigues; F. Langlais; R. Naslain

doi:10.1016/S0925-9635(01)00712-9

In situ kinetic analysis of SiC filaments CVD

O. Féron
, G. Chollon
, F. Dartigues
, F. Langlais
, R. Naslain

Univ. Bordeaux
Institut de Chimie de la Matière Condensée de Bordeaux

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

An in situ kinetic study of the SiC-based filament CVD from DCMS/H₂ and DCMS/C₃H₆/H₂ mixtures has been carried out. The results evidenced a low temperature regime (T<1150 °C) controlled by surface chemical reactions and a high temperature domain (T> 1150 °C) governed by the diffusion of reactive species to the substrate (mass transfer regime). The addition of propene to the DCMS/H₂ mixture leads to the decrease of the deposition rate, the increase of the activation energy (within the surface reaction limited regime) and the increase of the C/Si (at.) ratio. The dilution of DCMS in H₂ promotes the co-deposition of free silicon. Conversely, the addition of propene results in lower amounts of free silicon or even traces of free carbon for high deposition temperatures. The increase of the C/Si (at.) ratio observed in presence of propene might be related to the inhibition of the deposition of Si-rich species derived from DCMS, through reactions with propene or related unsaturated hydrocarbons in the gas phase.

Original language	English
Pages (from-to)	1234-1238
Number of pages	5
Journal	Diamond and Related Materials
Volume	11
Issue number	3-6
DOIs	https://doi.org/10.1016/S0925-9635(01)00712-9
Publication status	Published - 1 Mar 2002
Externally published	Yes

Keywords

CVD
Fibres
In situ
Silicon carbide

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10.1016/S0925-9635(01)00712-9

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@article{6b00e698f7cb435ab20dc0133aebc72e,

title = "In situ kinetic analysis of SiC filaments CVD",

abstract = "An in situ kinetic study of the SiC-based filament CVD from DCMS/H2 and DCMS/C3H6/H2 mixtures has been carried out. The results evidenced a low temperature regime (T<1150 °C) controlled by surface chemical reactions and a high temperature domain (T> 1150 °C) governed by the diffusion of reactive species to the substrate (mass transfer regime). The addition of propene to the DCMS/H2 mixture leads to the decrease of the deposition rate, the increase of the activation energy (within the surface reaction limited regime) and the increase of the C/Si (at.) ratio. The dilution of DCMS in H2 promotes the co-deposition of free silicon. Conversely, the addition of propene results in lower amounts of free silicon or even traces of free carbon for high deposition temperatures. The increase of the C/Si (at.) ratio observed in presence of propene might be related to the inhibition of the deposition of Si-rich species derived from DCMS, through reactions with propene or related unsaturated hydrocarbons in the gas phase.",

keywords = "CVD, Fibres, In situ, Silicon carbide",

author = "O. F{\'e}ron and G. Chollon and F. Dartigues and F. Langlais and R. Naslain",

year = "2002",

month = mar,

day = "1",

doi = "10.1016/S0925-9635(01)00712-9",

language = "English",

volume = "11",

pages = "1234--1238",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

number = "3-6",

}

TY - JOUR

T1 - In situ kinetic analysis of SiC filaments CVD

AU - Féron, O.

AU - Chollon, G.

AU - Dartigues, F.

AU - Langlais, F.

AU - Naslain, R.

PY - 2002/3/1

Y1 - 2002/3/1

N2 - An in situ kinetic study of the SiC-based filament CVD from DCMS/H2 and DCMS/C3H6/H2 mixtures has been carried out. The results evidenced a low temperature regime (T<1150 °C) controlled by surface chemical reactions and a high temperature domain (T> 1150 °C) governed by the diffusion of reactive species to the substrate (mass transfer regime). The addition of propene to the DCMS/H2 mixture leads to the decrease of the deposition rate, the increase of the activation energy (within the surface reaction limited regime) and the increase of the C/Si (at.) ratio. The dilution of DCMS in H2 promotes the co-deposition of free silicon. Conversely, the addition of propene results in lower amounts of free silicon or even traces of free carbon for high deposition temperatures. The increase of the C/Si (at.) ratio observed in presence of propene might be related to the inhibition of the deposition of Si-rich species derived from DCMS, through reactions with propene or related unsaturated hydrocarbons in the gas phase.

AB - An in situ kinetic study of the SiC-based filament CVD from DCMS/H2 and DCMS/C3H6/H2 mixtures has been carried out. The results evidenced a low temperature regime (T<1150 °C) controlled by surface chemical reactions and a high temperature domain (T> 1150 °C) governed by the diffusion of reactive species to the substrate (mass transfer regime). The addition of propene to the DCMS/H2 mixture leads to the decrease of the deposition rate, the increase of the activation energy (within the surface reaction limited regime) and the increase of the C/Si (at.) ratio. The dilution of DCMS in H2 promotes the co-deposition of free silicon. Conversely, the addition of propene results in lower amounts of free silicon or even traces of free carbon for high deposition temperatures. The increase of the C/Si (at.) ratio observed in presence of propene might be related to the inhibition of the deposition of Si-rich species derived from DCMS, through reactions with propene or related unsaturated hydrocarbons in the gas phase.

KW - CVD

KW - Fibres

KW - In situ

KW - Silicon carbide

UR - https://www.scopus.com/pages/publications/0036508152

U2 - 10.1016/S0925-9635(01)00712-9

DO - 10.1016/S0925-9635(01)00712-9

M3 - Article

AN - SCOPUS:0036508152

SN - 0925-9635

VL - 11

SP - 1234

EP - 1238

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3-6

ER -

In situ kinetic analysis of SiC filaments CVD

Abstract

Keywords

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