In situ microwave reflectivity measurements of the changes in surface recombination of crystalline silicon induced by the exposure to silane, silane/helium, and helium plasmas

H. C. Neitzert; N. Layadi; P. Roca I Cabarrocas; R. Vanderhaghen

doi:10.1063/1.112088

In situ microwave reflectivity measurements of the changes in surface recombination of crystalline silicon induced by the exposure to silane, silane/helium, and helium plasmas

H. C. Neitzert
, N. Layadi
, P. Roca I Cabarrocas
, R. Vanderhaghen

Institut polytechnique de Paris

Research output: Contribution to journal › Article › peer-review

Abstract

Measurements of the transient photoconductivity detected via the change in microwave reflection after laser pulse illumination have been performed during the exposure of crystalline silicon substrates to a pure silane, silane/helium, and pure helium plasma. In all cases, a similar increase of the surface recombination rate is detected immediately after plasma start. While the surface recombination remains high in the case of the pure helium plasma, a decrease of the interface recombination is observed for the pure silane and silane/helium plasma, related to the deposition of hydrogenated amorphous silicon.

Original language	English
Pages (from-to)	1260-1262
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	10
DOIs	https://doi.org/10.1063/1.112088
Publication status	Published - 1 Jan 1994

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title = "In situ microwave reflectivity measurements of the changes in surface recombination of crystalline silicon induced by the exposure to silane, silane/helium, and helium plasmas",

abstract = "Measurements of the transient photoconductivity detected via the change in microwave reflection after laser pulse illumination have been performed during the exposure of crystalline silicon substrates to a pure silane, silane/helium, and pure helium plasma. In all cases, a similar increase of the surface recombination rate is detected immediately after plasma start. While the surface recombination remains high in the case of the pure helium plasma, a decrease of the interface recombination is observed for the pure silane and silane/helium plasma, related to the deposition of hydrogenated amorphous silicon.",

author = "Neitzert, \{H. C.\} and N. Layadi and \{Roca I Cabarrocas\}, P. and R. Vanderhaghen",

year = "1994",

month = jan,

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doi = "10.1063/1.112088",

language = "English",

volume = "65",

pages = "1260--1262",

journal = "Applied Physics Letters",

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In situ microwave reflectivity measurements of the changes in surface recombination of crystalline silicon induced by the exposure to silane, silane/helium, and helium plasmas. / Neitzert, H. C.; Layadi, N.; Roca I Cabarrocas, P. et al.
In: Applied Physics Letters, Vol. 65, No. 10, 01.01.1994, p. 1260-1262.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - In situ microwave reflectivity measurements of the changes in surface recombination of crystalline silicon induced by the exposure to silane, silane/helium, and helium plasmas

AU - Neitzert, H. C.

AU - Layadi, N.

AU - Roca I Cabarrocas, P.

AU - Vanderhaghen, R.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Measurements of the transient photoconductivity detected via the change in microwave reflection after laser pulse illumination have been performed during the exposure of crystalline silicon substrates to a pure silane, silane/helium, and pure helium plasma. In all cases, a similar increase of the surface recombination rate is detected immediately after plasma start. While the surface recombination remains high in the case of the pure helium plasma, a decrease of the interface recombination is observed for the pure silane and silane/helium plasma, related to the deposition of hydrogenated amorphous silicon.

AB - Measurements of the transient photoconductivity detected via the change in microwave reflection after laser pulse illumination have been performed during the exposure of crystalline silicon substrates to a pure silane, silane/helium, and pure helium plasma. In all cases, a similar increase of the surface recombination rate is detected immediately after plasma start. While the surface recombination remains high in the case of the pure helium plasma, a decrease of the interface recombination is observed for the pure silane and silane/helium plasma, related to the deposition of hydrogenated amorphous silicon.

U2 - 10.1063/1.112088

DO - 10.1063/1.112088

M3 - Article

AN - SCOPUS:0028765610

SN - 0003-6951

VL - 65

SP - 1260

EP - 1262

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

In situ microwave reflectivity measurements of the changes in surface recombination of crystalline silicon induced by the exposure to silane, silane/helium, and helium plasmas

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