@inproceedings{60471e1c1cb243439d3d313d22bf3e05,
title = "In situ processing of InP by Flash LPCVD for surface preparation and gate oxide deposition",
abstract = "Silicon dioxide films deposited on InP substrates are obtained in a reduced pressure, air and water cooled CVD reactor, with a rapid thermal heating. It is shown that a 700°C temperature flash results in Si02 deposition rates close to 100 A/sec. High temperature deposition (700°C) is thus obtained in few seconds on InP substrates without any surface damage. These layers display excellent electrical properties well suited for MISFET applications. Improvement of the interface properties of this structure is obtained by flowing silane on the InP substrate prior to oxide deposition. interface studies show that silane reduces the InP native oxides.",
author = "Nissim, \{Y. I.\} and C. Licoppe and Moison, \{J. M.\} and C. Meriadec",
note = "Publisher Copyright: {\textcopyright} 1988 Les Editions de Physique.; 18th European Solid State Device Research Conference, ESSDERC 1988 ; Conference date: 13-09-1988 Through 16-09-1988",
year = "1988",
month = jan,
day = "1",
language = "English",
isbn = "9782868830999",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "C4213--C4215",
editor = "J.-P. Nougier and D. Gasquet",
booktitle = "ESSDERC 1988 - 18th European Solid State Device Research Conference",
}