InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

K. Klaime; C. Calo; R. Piron; C. Paranthoen; D. Thiam; T. Batte; O. Dehaese; J. Le Pouliquen; S. Loualiche; A. Le Corre; K. Merghem; A. Martinez; A. Ramdane

doi:10.1109/ICIPRM.2013.6562595

InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

K. Klaime
, C. Calo
, R. Piron
, C. Paranthoen
, D. Thiam
, T. Batte
, O. Dehaese
, J. Le Pouliquen
, S. Loualiche
, A. Le Corre
, K. Merghem
, A. Martinez
, A. Ramdane

IRISA
Centre de Nanosciences et de Nanotechnologies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.

Original language	English
Title of host publication	2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013
DOIs	https://doi.org/10.1109/ICIPRM.2013.6562595
Publication status	Published - 26 Aug 2013
Externally published	Yes
Event	2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 - Kobe, Japan Duration: 19 May 2013 → 23 May 2013

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013
Country/Territory	Japan
City	Kobe
Period	19/05/13 → 23/05/13

Keywords

Mode-locking
quantum dots (QDs)
semiconductors laser

Access to Document

10.1109/ICIPRM.2013.6562595

Cite this

Klaime, K., Calo, C., Piron, R., Paranthoen, C., Thiam, D., Batte, T., Dehaese, O., Le Pouliquen, J., Loualiche, S., Le Corre, A., Merghem, K., Martinez, A., & Ramdane, A. (2013). InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate. In 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013 Article 6562595 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2013.6562595

@inproceedings{6e90be667d65430893633cac8d70579a,

title = "InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate",

abstract = "We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.",

keywords = "Mode-locking, quantum dots (QDs), semiconductors laser",

author = "K. Klaime and C. Calo and R. Piron and C. Paranthoen and D. Thiam and T. Batte and O. Dehaese and \{Le Pouliquen\}, J. and S. Loualiche and \{Le Corre\}, A. and K. Merghem and A. Martinez and A. Ramdane",

year = "2013",

month = aug,

day = "26",

doi = "10.1109/ICIPRM.2013.6562595",

language = "English",

isbn = "9781467361309",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

booktitle = "2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013",

note = "2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 ; Conference date: 19-05-2013 Through 23-05-2013",

}

Klaime, K, Calo, C, Piron, R, Paranthoen, C, Thiam, D, Batte, T, Dehaese, O, Le Pouliquen, J, Loualiche, S, Le Corre, A, Merghem, K, Martinez, A & Ramdane, A 2013, InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate. in 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013., 6562595, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013, Kobe, Japan, 19/05/13. https://doi.org/10.1109/ICIPRM.2013.6562595

InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate. / Klaime, K.; Calo, C.; Piron, R. et al.
2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013. 2013. 6562595 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

AU - Klaime, K.

AU - Calo, C.

AU - Piron, R.

AU - Paranthoen, C.

AU - Thiam, D.

AU - Batte, T.

AU - Dehaese, O.

AU - Le Pouliquen, J.

AU - Loualiche, S.

AU - Le Corre, A.

AU - Merghem, K.

AU - Martinez, A.

AU - Ramdane, A.

PY - 2013/8/26

Y1 - 2013/8/26

N2 - We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.

AB - We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.

KW - Mode-locking

KW - quantum dots (QDs)

KW - semiconductors laser

U2 - 10.1109/ICIPRM.2013.6562595

DO - 10.1109/ICIPRM.2013.6562595

M3 - Conference contribution

AN - SCOPUS:84882315427

SN - 9781467361309

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

BT - 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013

T2 - 2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013

Y2 - 19 May 2013 through 23 May 2013

ER -

InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

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Keywords

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