InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

K. Klaime; C. Calo; R. Piron; C. Paranthoen; D. Thiam; T. Batte; O. Dehaese; J. Le Pouliquen; S. Loualiche; A. Le Corre; K. Merghem; A. Martinez; A. Ramdane

doi:10.1109/ICIPRM.2013.6562595

InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

K. Klaime, C. Calo, R. Piron, C. Paranthoen, D. Thiam, T. Batte, O. Dehaese, J. Le Pouliquen, S. Loualiche, A. Le Corre, K. Merghem, A. Martinez, A. Ramdane

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.

Original language	English
Title of host publication	2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013
DOIs	https://doi.org/10.1109/ICIPRM.2013.6562595
Publication status	Published - 26 Aug 2013
Externally published	Yes
Event	2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 - Kobe, Japan Duration: 19 May 2013 → 23 May 2013

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013
Country/Territory	Japan
City	Kobe
Period	19/05/13 → 23/05/13

Keywords

Mode-locking
quantum dots (QDs)
semiconductors laser

Access to Document

10.1109/ICIPRM.2013.6562595

Cite this

Klaime, K., Calo, C., Piron, R., Paranthoen, C., Thiam, D., Batte, T., Dehaese, O., Le Pouliquen, J., Loualiche, S., Le Corre, A., Merghem, K., Martinez, A., & Ramdane, A. (2013). InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate. In 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013 Article 6562595 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2013.6562595

@inproceedings{6e90be667d65430893633cac8d70579a,

title = "InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate",

abstract = "We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.",

keywords = "Mode-locking, quantum dots (QDs), semiconductors laser",

author = "K. Klaime and C. Calo and R. Piron and C. Paranthoen and D. Thiam and T. Batte and O. Dehaese and \{Le Pouliquen\}, J. and S. Loualiche and \{Le Corre\}, A. and K. Merghem and A. Martinez and A. Ramdane",

year = "2013",

month = aug,

day = "26",

doi = "10.1109/ICIPRM.2013.6562595",

language = "English",

isbn = "9781467361309",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

booktitle = "2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013",

note = "2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013 ; Conference date: 19-05-2013 Through 23-05-2013",

}

Klaime, K, Calo, C, Piron, R, Paranthoen, C, Thiam, D, Batte, T, Dehaese, O, Le Pouliquen, J, Loualiche, S, Le Corre, A, Merghem, K, Martinez, A & Ramdane, A 2013, InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate. in 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013., 6562595, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013, Kobe, Japan, 19/05/13. https://doi.org/10.1109/ICIPRM.2013.6562595

InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate. / Klaime, K.; Calo, C.; Piron, R. et al.
2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013. 2013. 6562595 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

AU - Klaime, K.

AU - Calo, C.

AU - Piron, R.

AU - Paranthoen, C.

AU - Thiam, D.

AU - Batte, T.

AU - Dehaese, O.

AU - Le Pouliquen, J.

AU - Loualiche, S.

AU - Le Corre, A.

AU - Merghem, K.

AU - Martinez, A.

AU - Ramdane, A.

PY - 2013/8/26

Y1 - 2013/8/26

N2 - We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.

AB - We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.

KW - Mode-locking

KW - quantum dots (QDs)

KW - semiconductors laser

U2 - 10.1109/ICIPRM.2013.6562595

DO - 10.1109/ICIPRM.2013.6562595

M3 - Conference contribution

AN - SCOPUS:84882315427

SN - 9781467361309

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

BT - 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013

T2 - 2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013

Y2 - 19 May 2013 through 23 May 2013

ER -

InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

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Keywords

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