Inas/inp quantum-dot passively mode-locked lasers for 1.55-μm applications

Ricardo Rosales; Kamel Merghem; Anthony Martinez; A. Akrout; J. P. Tourrenc; Alain Accard; Francois Lelarge; Abderrahim Ramdane

doi:10.1109/JSTQE.2011.2116772

Inas/inp quantum-dot passively mode-locked lasers for 1.55-μm applications

Ricardo Rosales
, Kamel Merghem
, Anthony Martinez
, A. Akrout
, J. P. Tourrenc
, Alain Accard
, Francois Lelarge
, Abderrahim Ramdane

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports on recent results on passively mode-locked InAs/InP quantum-dot-based lasers. These low-dimensional structures have proved very attractive in improving most of the properties of these devices. Subpicosecond pulse generation at repetition rates up to beyond 300GHz has readily been demonstrated. Ultranarrow RF linewidths reach record values of less than 1 kHz. Controlled optical feedback allows a further reduction of this linewidth yielding extremely low timing jitter. A comparison of single-section and standard two-section lasers is given for the first time. These performances open the way to various applications at 1.55 μm, including very high bit rate all-optical signal processing, frequency comb generation, radio over fiber, and low-noise all-optical oscillators.

Original language	English
Article number	39
Pages (from-to)	1292-1301
Number of pages	10
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	17
Issue number	5
DOIs	https://doi.org/10.1109/JSTQE.2011.2116772
Publication status	Published - 7 Apr 2011
Externally published	Yes

Keywords

Mode-locked semiconductor lasers
optical pulse generation
quantum dot (QD) lasers

Access to Document

10.1109/JSTQE.2011.2116772

Cite this

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title = "Inas/inp quantum-dot passively mode-locked lasers for 1.55-μm applications",

abstract = "This paper reports on recent results on passively mode-locked InAs/InP quantum-dot-based lasers. These low-dimensional structures have proved very attractive in improving most of the properties of these devices. Subpicosecond pulse generation at repetition rates up to beyond 300GHz has readily been demonstrated. Ultranarrow RF linewidths reach record values of less than 1 kHz. Controlled optical feedback allows a further reduction of this linewidth yielding extremely low timing jitter. A comparison of single-section and standard two-section lasers is given for the first time. These performances open the way to various applications at 1.55 μm, including very high bit rate all-optical signal processing, frequency comb generation, radio over fiber, and low-noise all-optical oscillators.",

keywords = "Mode-locked semiconductor lasers, optical pulse generation, quantum dot (QD) lasers",

author = "Ricardo Rosales and Kamel Merghem and Anthony Martinez and A. Akrout and Tourrenc, \{J. P.\} and Alain Accard and Francois Lelarge and Abderrahim Ramdane",

year = "2011",

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doi = "10.1109/JSTQE.2011.2116772",

language = "English",

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T1 - Inas/inp quantum-dot passively mode-locked lasers for 1.55-μm applications

AU - Rosales, Ricardo

AU - Merghem, Kamel

AU - Martinez, Anthony

AU - Akrout, A.

AU - Tourrenc, J. P.

AU - Accard, Alain

AU - Lelarge, Francois

AU - Ramdane, Abderrahim

PY - 2011/4/7

Y1 - 2011/4/7

N2 - This paper reports on recent results on passively mode-locked InAs/InP quantum-dot-based lasers. These low-dimensional structures have proved very attractive in improving most of the properties of these devices. Subpicosecond pulse generation at repetition rates up to beyond 300GHz has readily been demonstrated. Ultranarrow RF linewidths reach record values of less than 1 kHz. Controlled optical feedback allows a further reduction of this linewidth yielding extremely low timing jitter. A comparison of single-section and standard two-section lasers is given for the first time. These performances open the way to various applications at 1.55 μm, including very high bit rate all-optical signal processing, frequency comb generation, radio over fiber, and low-noise all-optical oscillators.

AB - This paper reports on recent results on passively mode-locked InAs/InP quantum-dot-based lasers. These low-dimensional structures have proved very attractive in improving most of the properties of these devices. Subpicosecond pulse generation at repetition rates up to beyond 300GHz has readily been demonstrated. Ultranarrow RF linewidths reach record values of less than 1 kHz. Controlled optical feedback allows a further reduction of this linewidth yielding extremely low timing jitter. A comparison of single-section and standard two-section lasers is given for the first time. These performances open the way to various applications at 1.55 μm, including very high bit rate all-optical signal processing, frequency comb generation, radio over fiber, and low-noise all-optical oscillators.

KW - Mode-locked semiconductor lasers

KW - optical pulse generation

KW - quantum dot (QD) lasers

U2 - 10.1109/JSTQE.2011.2116772

DO - 10.1109/JSTQE.2011.2116772

M3 - Article

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SN - 1077-260X

VL - 17

SP - 1292

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JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 5

M1 - 39

ER -

Inas/inp quantum-dot passively mode-locked lasers for 1.55-μm applications

Abstract

Keywords

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