Influence of Al/Ge ratio on radiation-induced attenuation in nanostructured erbium-doped fibers preforms

  • M. Leon
  • , M. Lancry
  • , N. Ollier
  • , L. Bigot
  • , H. El Hamzaoui
  • , Inna Savelii
  • , A. Pastouret
  • , E. Burov
  • , B. Poumellec
  • , M. Bouazaoui

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have compared the radiation resistance of various Er3+-doped fiber preforms manufactured with different technologies: Si and Al nanoparticles doped fibers, and standard MCVD fibers. All of them have been irradiated with a total gamma dose of 5.9 kGy and then studied using absorption and EPR spectroscopies.

Original languageEnglish
Title of host publication2015 Conference on Lasers and Electro-Optics, CLEO 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781557529688
Publication statusPublished - 10 Aug 2015
Externally publishedYes
EventConference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
Duration: 10 May 201515 May 2015

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest
Volume2015-August

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2015
Country/TerritoryUnited States
CitySan Jose
Period10/05/1515/05/15

Keywords

  • Erbium
  • Optical attenuators
  • Optical fiber amplifiers
  • Optical fiber communication
  • Silicon compounds

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