Skip to main navigation Skip to search Skip to main content

Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots

  • K. Kowalik
  • , O. Krebs
  • , A. Lemaître
  • , S. Laurent
  • , P. Senellart
  • , P. Voisin
  • , J. A. Gaj

Research output: Contribution to journalArticlepeer-review

Abstract

The influence of an in-plane electric field on the optical properties of single quantum dots is investigated. On a sample containing a plane of InAs/ GaAs dots, micrometer-size electro-optical structures were produced in order to apply an external electric field in the dot plane. A large decrease of the anisotropic exchange splitting, correlated with the in-plane Stark shift, is observed.

Original languageEnglish
Article number041907
Pages (from-to)041907-1-041907-3
JournalApplied Physics Letters
Volume86
Issue number4
DOIs
Publication statusPublished - 24 Feb 2005

Fingerprint

Dive into the research topics of 'Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots'. Together they form a unique fingerprint.

Cite this