Influence of pressure on nitrogen incorporation in ultraviolet chemical vapor deposited SiO2 films

C. Debauche; C. Licoppe; P. Ossart; R. A.B. Devine; F. Rochet

doi:10.1063/1.354182

Influence of pressure on nitrogen incorporation in ultraviolet chemical vapor deposited SiO₂ films

C. Debauche, C. Licoppe, P. Ossart, R. A.B. Devine, F. Rochet

Research output: Contribution to journal › Article › peer-review

Abstract

Ultraviolet induced chemical vapor deposition was used to deposit silicon dioxide dielectrics on III-V materials at low temperature. Auger electron spectroscopy and nuclear reaction analysis measurements show that the nitrogen concentration in the layers decreases continuously with the total pressure. These results are in complete agreement with infrared transmission spectroscopic and ellipsometric measurements. The number and the nature of the paramagnetic defects measured by electron spin resonance are also shown to be dependent upon the deposition pressure. Bridging nitrogen (O₃≡Si-N- Si≡O₃) and oxygen-like-vacancy centers (E'₁) defects are observed in small quantities (≊10¹⁶ cm^-3), while overcoordinated N defects are observed in concentrations up to 10¹⁸ cm^-3, depending upon deposition pressure. Such SiO₂ films were used in the processing of metal-insulator InP structures. Improvement of the electrical properties also occurs when the total pressure is increased, in agreement with expectations founded on the electron spin resonance results.

Original language	English
Pages (from-to)	5672-5678
Number of pages	7
Journal	Journal of Applied Physics
Volume	74
Issue number	9
DOIs	https://doi.org/10.1063/1.354182
Publication status	Published - 1 Dec 1993
Externally published	Yes

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title = "Influence of pressure on nitrogen incorporation in ultraviolet chemical vapor deposited SiO2 films",

abstract = "Ultraviolet induced chemical vapor deposition was used to deposit silicon dioxide dielectrics on III-V materials at low temperature. Auger electron spectroscopy and nuclear reaction analysis measurements show that the nitrogen concentration in the layers decreases continuously with the total pressure. These results are in complete agreement with infrared transmission spectroscopic and ellipsometric measurements. The number and the nature of the paramagnetic defects measured by electron spin resonance are also shown to be dependent upon the deposition pressure. Bridging nitrogen (O3≡Si-N- Si≡O3) and oxygen-like-vacancy centers (E'1) defects are observed in small quantities (≊1016 cm-3), while overcoordinated N defects are observed in concentrations up to 1018 cm-3, depending upon deposition pressure. Such SiO2 films were used in the processing of metal-insulator InP structures. Improvement of the electrical properties also occurs when the total pressure is increased, in agreement with expectations founded on the electron spin resonance results.",

author = "C. Debauche and C. Licoppe and P. Ossart and Devine, \{R. A.B.\} and F. Rochet",

year = "1993",

month = dec,

day = "1",

doi = "10.1063/1.354182",

language = "English",

volume = "74",

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journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Influence of pressure on nitrogen incorporation in ultraviolet chemical vapor deposited SiO2 films

AU - Debauche, C.

AU - Licoppe, C.

AU - Ossart, P.

AU - Devine, R. A.B.

AU - Rochet, F.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - Ultraviolet induced chemical vapor deposition was used to deposit silicon dioxide dielectrics on III-V materials at low temperature. Auger electron spectroscopy and nuclear reaction analysis measurements show that the nitrogen concentration in the layers decreases continuously with the total pressure. These results are in complete agreement with infrared transmission spectroscopic and ellipsometric measurements. The number and the nature of the paramagnetic defects measured by electron spin resonance are also shown to be dependent upon the deposition pressure. Bridging nitrogen (O3≡Si-N- Si≡O3) and oxygen-like-vacancy centers (E'1) defects are observed in small quantities (≊1016 cm-3), while overcoordinated N defects are observed in concentrations up to 1018 cm-3, depending upon deposition pressure. Such SiO2 films were used in the processing of metal-insulator InP structures. Improvement of the electrical properties also occurs when the total pressure is increased, in agreement with expectations founded on the electron spin resonance results.

AB - Ultraviolet induced chemical vapor deposition was used to deposit silicon dioxide dielectrics on III-V materials at low temperature. Auger electron spectroscopy and nuclear reaction analysis measurements show that the nitrogen concentration in the layers decreases continuously with the total pressure. These results are in complete agreement with infrared transmission spectroscopic and ellipsometric measurements. The number and the nature of the paramagnetic defects measured by electron spin resonance are also shown to be dependent upon the deposition pressure. Bridging nitrogen (O3≡Si-N- Si≡O3) and oxygen-like-vacancy centers (E'1) defects are observed in small quantities (≊1016 cm-3), while overcoordinated N defects are observed in concentrations up to 1018 cm-3, depending upon deposition pressure. Such SiO2 films were used in the processing of metal-insulator InP structures. Improvement of the electrical properties also occurs when the total pressure is increased, in agreement with expectations founded on the electron spin resonance results.

U2 - 10.1063/1.354182

DO - 10.1063/1.354182

M3 - Article

AN - SCOPUS:4243062385

SN - 0021-8979

VL - 74

SP - 5672

EP - 5678

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Influence of pressure on nitrogen incorporation in ultraviolet chemical vapor deposited SiO2 films

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Influence of pressure on nitrogen incorporation in ultraviolet chemical vapor deposited SiO₂ films