Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:H

Christian Godet; Phil Morin; Pere Roca I Cabarrocas

doi:10.1016/0022-3093(95)00727-X

Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:H

Christian Godet, Phil Morin, Pere Roca I Cabarrocas

Institut polytechnique de Paris

Research output: Contribution to journal › Article › peer-review

Abstract

In the field of the stability of a-Si:H, the received wisdom is that a high clustered-phase SiH concentration is to be avoided. In this high-intensity illumination study of a-Si:H films grown using different techniques, it is found that the steady-state defect density is proportional to the dilute-phase concentration [SiH]_d below ≈ 16%. A model is proposed to quantify the participation of the different H-bonding configurations in the metastability phenomena. It predicts a steady-state defect density proportional to [SiH]_d and accurately describes the recently observed changes in the infrared absorption of the various H-bonding configurations during light-soaking.

Original language	English
Pages (from-to)	449-452
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	198-200
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(95)00727-X
Publication status	Published - 1 Jan 1996

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@article{55a157edd02a4410b190c6d4a0453f29,

title = "Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:H",

abstract = "In the field of the stability of a-Si:H, the received wisdom is that a high clustered-phase SiH concentration is to be avoided. In this high-intensity illumination study of a-Si:H films grown using different techniques, it is found that the steady-state defect density is proportional to the dilute-phase concentration [SiH]d below ≈ 16\%. A model is proposed to quantify the participation of the different H-bonding configurations in the metastability phenomena. It predicts a steady-state defect density proportional to [SiH]d and accurately describes the recently observed changes in the infrared absorption of the various H-bonding configurations during light-soaking.",

author = "Christian Godet and Phil Morin and \{Roca I Cabarrocas\}, Pere",

year = "1996",

month = jan,

day = "1",

doi = "10.1016/0022-3093(95)00727-X",

language = "English",

volume = "198-200",

pages = "449--452",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

number = "PART 1",

}

TY - JOUR

T1 - Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:H

AU - Godet, Christian

AU - Morin, Phil

AU - Roca I Cabarrocas, Pere

PY - 1996/1/1

Y1 - 1996/1/1

N2 - In the field of the stability of a-Si:H, the received wisdom is that a high clustered-phase SiH concentration is to be avoided. In this high-intensity illumination study of a-Si:H films grown using different techniques, it is found that the steady-state defect density is proportional to the dilute-phase concentration [SiH]d below ≈ 16%. A model is proposed to quantify the participation of the different H-bonding configurations in the metastability phenomena. It predicts a steady-state defect density proportional to [SiH]d and accurately describes the recently observed changes in the infrared absorption of the various H-bonding configurations during light-soaking.

AB - In the field of the stability of a-Si:H, the received wisdom is that a high clustered-phase SiH concentration is to be avoided. In this high-intensity illumination study of a-Si:H films grown using different techniques, it is found that the steady-state defect density is proportional to the dilute-phase concentration [SiH]d below ≈ 16%. A model is proposed to quantify the participation of the different H-bonding configurations in the metastability phenomena. It predicts a steady-state defect density proportional to [SiH]d and accurately describes the recently observed changes in the infrared absorption of the various H-bonding configurations during light-soaking.

U2 - 10.1016/0022-3093(95)00727-X

DO - 10.1016/0022-3093(95)00727-X

M3 - Article

AN - SCOPUS:0030563487

SN - 0022-3093

VL - 198-200

SP - 449

EP - 452

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:H

Abstract

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