Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties

M. V. Khenkin; A. V. Emelyanov; A. G. Kazanskii; P. A. Forsh; P. K. Kashkarov; E. I. Terukov; D. L. Orekhov; P. Roca i Cabarrocas

doi:10.1134/S1063782613090108

Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties

M. V. Khenkin
, A. V. Emelyanov
, A. G. Kazanskii
, P. A. Forsh
, P. K. Kashkarov
, E. I. Terukov
, D. L. Orekhov
, P. Roca i Cabarrocas

Moscow State University
Kurchatov Institute
Ioffe Institute

Research output: Contribution to journal › Article › peer-review

Abstract

The structural, optical, and photoelectric properties of polymorphous silicon films produced by plasma-enhanced chemical vapor deposition from a mixture of monosilane and hydrogen at high pressure are studied. Variations in the pressure of the gas mixture used for film production barely change the Raman spectra of the films, but induce changes in the photoconductivity and in the absorption spectrum obtained by the constant-photocurrent technique. The experimentally observed change in the optical and photoelectric parameters of the films is attributed to some structural changes induced in the films by variations in the deposition parameters.

Original language	English
Pages (from-to)	1271-1274
Number of pages	4
Journal	Semiconductors
Volume	47
Issue number	9
DOIs	https://doi.org/10.1134/S1063782613090108
Publication status	Published - 1 Sept 2013

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title = "Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties",

abstract = "The structural, optical, and photoelectric properties of polymorphous silicon films produced by plasma-enhanced chemical vapor deposition from a mixture of monosilane and hydrogen at high pressure are studied. Variations in the pressure of the gas mixture used for film production barely change the Raman spectra of the films, but induce changes in the photoconductivity and in the absorption spectrum obtained by the constant-photocurrent technique. The experimentally observed change in the optical and photoelectric parameters of the films is attributed to some structural changes induced in the films by variations in the deposition parameters.",

author = "Khenkin, \{M. V.\} and Emelyanov, \{A. V.\} and Kazanskii, \{A. G.\} and Forsh, \{P. A.\} and Kashkarov, \{P. K.\} and Terukov, \{E. I.\} and Orekhov, \{D. L.\} and \{Roca i Cabarrocas\}, P.",

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doi = "10.1134/S1063782613090108",

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T1 - Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties

AU - Khenkin, M. V.

AU - Emelyanov, A. V.

AU - Kazanskii, A. G.

AU - Forsh, P. A.

AU - Kashkarov, P. K.

AU - Terukov, E. I.

AU - Orekhov, D. L.

AU - Roca i Cabarrocas, P.

PY - 2013/9/1

Y1 - 2013/9/1

N2 - The structural, optical, and photoelectric properties of polymorphous silicon films produced by plasma-enhanced chemical vapor deposition from a mixture of monosilane and hydrogen at high pressure are studied. Variations in the pressure of the gas mixture used for film production barely change the Raman spectra of the films, but induce changes in the photoconductivity and in the absorption spectrum obtained by the constant-photocurrent technique. The experimentally observed change in the optical and photoelectric parameters of the films is attributed to some structural changes induced in the films by variations in the deposition parameters.

AB - The structural, optical, and photoelectric properties of polymorphous silicon films produced by plasma-enhanced chemical vapor deposition from a mixture of monosilane and hydrogen at high pressure are studied. Variations in the pressure of the gas mixture used for film production barely change the Raman spectra of the films, but induce changes in the photoconductivity and in the absorption spectrum obtained by the constant-photocurrent technique. The experimentally observed change in the optical and photoelectric parameters of the films is attributed to some structural changes induced in the films by variations in the deposition parameters.

U2 - 10.1134/S1063782613090108

DO - 10.1134/S1063782613090108

M3 - Article

AN - SCOPUS:84883647671

SN - 1063-7826

VL - 47

SP - 1271

EP - 1274

JO - Semiconductors

JF - Semiconductors

IS - 9

ER -

Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties

Abstract

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