Influence of the hole population on the transient reflectivity signal of annealed low-temperature-grown GaAs

V. Ortiz; J. Nagle; A. Alexandrou

doi:10.1063/1.1463209

Influence of the hole population on the transient reflectivity signal of annealed low-temperature-grown GaAs

V. Ortiz
, J. Nagle
, A. Alexandrou

Research output: Contribution to journal › Article › peer-review

Abstract

We study the influence of the carrier dynamics on the transient reflectivity of low-temperature-grown GaAs samples. We report a precise modeling of the recorded reflectivity data, which exhibit multiexponential decays and changes in sign, using a standard point defect model and taking into account the effects of the band filling, band gap renormalization, and trap absorption. We show that the valence-band hole population plays an important role in the behavior of the signals, and that it must be taken into account in order to optimize low-temperature-grown GaAs-based devices.

Original language	English
Pages (from-to)	2505-2507
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	14
DOIs	https://doi.org/10.1063/1.1463209
Publication status	Published - 8 Apr 2002
Externally published	Yes

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title = "Influence of the hole population on the transient reflectivity signal of annealed low-temperature-grown GaAs",

abstract = "We study the influence of the carrier dynamics on the transient reflectivity of low-temperature-grown GaAs samples. We report a precise modeling of the recorded reflectivity data, which exhibit multiexponential decays and changes in sign, using a standard point defect model and taking into account the effects of the band filling, band gap renormalization, and trap absorption. We show that the valence-band hole population plays an important role in the behavior of the signals, and that it must be taken into account in order to optimize low-temperature-grown GaAs-based devices.",

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AU - Nagle, J.

AU - Alexandrou, A.

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N2 - We study the influence of the carrier dynamics on the transient reflectivity of low-temperature-grown GaAs samples. We report a precise modeling of the recorded reflectivity data, which exhibit multiexponential decays and changes in sign, using a standard point defect model and taking into account the effects of the band filling, band gap renormalization, and trap absorption. We show that the valence-band hole population plays an important role in the behavior of the signals, and that it must be taken into account in order to optimize low-temperature-grown GaAs-based devices.

AB - We study the influence of the carrier dynamics on the transient reflectivity of low-temperature-grown GaAs samples. We report a precise modeling of the recorded reflectivity data, which exhibit multiexponential decays and changes in sign, using a standard point defect model and taking into account the effects of the band filling, band gap renormalization, and trap absorption. We show that the valence-band hole population plays an important role in the behavior of the signals, and that it must be taken into account in order to optimize low-temperature-grown GaAs-based devices.

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DO - 10.1063/1.1463209

M3 - Article

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SN - 0003-6951

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SP - 2505

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Influence of the hole population on the transient reflectivity signal of annealed low-temperature-grown GaAs

Abstract

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