Abstract
A metastable irradiation-induced vacancy is detected by positrons in semi-insulating GaAs. The vacancy is associated with the metastable state of an irradiation-induced As-antisite-related defect. This metastable state absorbs IR light in contrast to the metastable state of the As-antisite-related native EL2 defect. This property can be explained by the presence of other defects complexed with the As antisite in electron-irradiated GaAs.
| Original language | English |
|---|---|
| Pages | 267-270 |
| Number of pages | 4 |
| Publication status | Published - 1 Dec 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr Duration: 29 Apr 1996 → 3 May 1996 |
Conference
| Conference | Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 |
|---|---|
| City | Toulouse, Fr |
| Period | 29/04/96 → 3/05/96 |
Fingerprint
Dive into the research topics of 'Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver