InGaN/GaN nanowire flexible light emitting diodes and photodetectors

  • Nan Guan
  • , Xing Dai
  • , Hezhi Zhang
  • , Lorenzo Mancini
  • , Akanksha Kapoor
  • , Catherine Bougerol
  • , Francois H. Julien
  • , Nicolas Cavassilas
  • , Martin Foldyna
  • , Christophe Durand
  • , Joel Eymery
  • , Maria Tchernycheva

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we present our recent progress towards flexible nitride nanowire devices: we propose a method to combine high flexibility of polymer films with high quantum efficiency provided by nitride nanowires. The lift-off and transfer procedure allows to assemble free-standing layers of nanowire materials with different bandgaps without any constraint related to lattice-matching or growth condition compatibility. Following this method, we demonstrate blue, green, two-colour and white light emitting diodes as well as p-n photodiodes for integrable UVA sensors.

Original languageEnglish
Title of host publicationICTON 2017 - 19th International Conference on Transparent Optical Networks
PublisherIEEE Computer Society
ISBN (Electronic)9781538608586
DOIs
Publication statusPublished - 1 Sept 2017
Event19th International Conference on Transparent Optical Networks, ICTON 2017 - Girona, Catalonia, Spain
Duration: 2 Jul 20176 Jul 2017

Publication series

NameInternational Conference on Transparent Optical Networks
ISSN (Electronic)2162-7339

Conference

Conference19th International Conference on Transparent Optical Networks, ICTON 2017
Country/TerritorySpain
CityGirona, Catalonia
Period2/07/176/07/17

Keywords

  • InGaN
  • flexible devices
  • light emitting diode
  • nanowires
  • photodiode

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