InP1-xAsx quantum dots in InP nanowires: A route for single photon emitters

  • Jean Christophe Harmand
  • , Fauzia Jabeen
  • , Linsheng Liu
  • , Gilles Patriarche
  • , Karine Gauthron
  • , Pascale Senellart
  • , David Elvira
  • , Alexios Beveratos

Research output: Contribution to journalArticlepeer-review

Abstract

We elaborate InP1-xAsx quantum dots embedded in InP nanowires by Au-catalyzed molecular beam epitaxy. Each nanowire contains a quantum dot well positioned on its axis and presenting a cylindrical geometry with sharp interfaces. The quantum dot emission wavelength can be tuned in the optical fiber transmission range and the final shape of the nanowire is tailored for efficient wave-guiding and light extraction. These objects, obtained in a single growth run, open a new route to the fabrication of efficient single photon sources.

Original languageEnglish
Pages (from-to)519-523
Number of pages5
JournalJournal of Crystal Growth
Volume378
DOIs
Publication statusPublished - 1 Jan 2013

Keywords

  • Epitaxy
  • Nanostructures
  • Nanowires
  • Quantum dots
  • Semiconducting III-V materials
  • Single photon source
  • Vapor-liquid-solid molecular beam

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