Intense photoluminescence of thin films of porous hydrogenated microcrystalline silicon

I. Solomon; K. Rerbal; J. N. Chazalviel; F. Ozanam; R. Cort̀s

doi:10.1063/1.2909914

Intense photoluminescence of thin films of porous hydrogenated microcrystalline silicon

I. Solomon
, K. Rerbal
, J. N. Chazalviel
, F. Ozanam
, R. Cort̀s

Research output: Contribution to journal › Article › peer-review

Abstract

We report the preparation of highly photoluminescent porous silicon in the form of thin films with thicknesses of around 1 μm. These films are obtained by stain etching thin films of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition with a flow of silane gas (SiH4) that is highly diluted in hydrogen. Stain etching is performed with aqueous solutions of hydrofluoric acid and Fe(III) in the form of ferric chloride (FeCl3). The porous silicon obtained shows a strong photoluminescence with a quantum efficiency estimated in the 1%-10% range. It could be used for the design of inexpensive large-surface electroluminescent devices.

Original language	English
Article number	083108
Journal	Journal of Applied Physics
Volume	103
Issue number	8
DOIs	https://doi.org/10.1063/1.2909914
Publication status	Published - 9 May 2008

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title = "Intense photoluminescence of thin films of porous hydrogenated microcrystalline silicon",

abstract = "We report the preparation of highly photoluminescent porous silicon in the form of thin films with thicknesses of around 1 μm. These films are obtained by stain etching thin films of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition with a flow of silane gas (SiH4) that is highly diluted in hydrogen. Stain etching is performed with aqueous solutions of hydrofluoric acid and Fe(III) in the form of ferric chloride (FeCl3). The porous silicon obtained shows a strong photoluminescence with a quantum efficiency estimated in the 1\%-10\% range. It could be used for the design of inexpensive large-surface electroluminescent devices.",

author = "I. Solomon and K. Rerbal and Chazalviel, \{J. N.\} and F. Ozanam and R. Cor{\`t}s",

year = "2008",

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T1 - Intense photoluminescence of thin films of porous hydrogenated microcrystalline silicon

AU - Solomon, I.

AU - Rerbal, K.

AU - Chazalviel, J. N.

AU - Ozanam, F.

AU - Cort̀s, R.

PY - 2008/5/9

Y1 - 2008/5/9

N2 - We report the preparation of highly photoluminescent porous silicon in the form of thin films with thicknesses of around 1 μm. These films are obtained by stain etching thin films of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition with a flow of silane gas (SiH4) that is highly diluted in hydrogen. Stain etching is performed with aqueous solutions of hydrofluoric acid and Fe(III) in the form of ferric chloride (FeCl3). The porous silicon obtained shows a strong photoluminescence with a quantum efficiency estimated in the 1%-10% range. It could be used for the design of inexpensive large-surface electroluminescent devices.

AB - We report the preparation of highly photoluminescent porous silicon in the form of thin films with thicknesses of around 1 μm. These films are obtained by stain etching thin films of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition with a flow of silane gas (SiH4) that is highly diluted in hydrogen. Stain etching is performed with aqueous solutions of hydrofluoric acid and Fe(III) in the form of ferric chloride (FeCl3). The porous silicon obtained shows a strong photoluminescence with a quantum efficiency estimated in the 1%-10% range. It could be used for the design of inexpensive large-surface electroluminescent devices.

U2 - 10.1063/1.2909914

DO - 10.1063/1.2909914

M3 - Article

AN - SCOPUS:43049150438

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 083108

ER -

Intense photoluminescence of thin films of porous hydrogenated microcrystalline silicon

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