Intensity-invariant subpicosecond absorption saturation in heavy-ion irradiated bulk GaAs

N. Stelmakh; J. Mangeney; A. Alexandrou; E. L. Portnoi

doi:10.1063/1.122873

Intensity-invariant subpicosecond absorption saturation in heavy-ion irradiated bulk GaAs

N. Stelmakh
, J. Mangeney
, A. Alexandrou
, E. L. Portnoi

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate that bulk GaAs irradiated by heavy Au⁺ ions shows efficient saturable absorption with subpicosecond recovery time and without any relaxation rate saturation up to excitation densities as high as 1.6mJ/cm². A comparison with other types of ion irradiation shows that heavy-ion-irradiated GaAs is a very promising material for ultrafast optoelectronics and optical processing at high repetition rates.

Original language	English
Pages (from-to)	3715-3717
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	25
DOIs	https://doi.org/10.1063/1.122873
Publication status	Published - 1 Jan 1998

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10.1063/1.122873

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title = "Intensity-invariant subpicosecond absorption saturation in heavy-ion irradiated bulk GaAs",

abstract = "We demonstrate that bulk GaAs irradiated by heavy Au+ ions shows efficient saturable absorption with subpicosecond recovery time and without any relaxation rate saturation up to excitation densities as high as 1.6mJ/cm2. A comparison with other types of ion irradiation shows that heavy-ion-irradiated GaAs is a very promising material for ultrafast optoelectronics and optical processing at high repetition rates.",

author = "N. Stelmakh and J. Mangeney and A. Alexandrou and Portnoi, \{E. L.\}",

year = "1998",

month = jan,

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doi = "10.1063/1.122873",

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T1 - Intensity-invariant subpicosecond absorption saturation in heavy-ion irradiated bulk GaAs

AU - Stelmakh, N.

AU - Mangeney, J.

AU - Alexandrou, A.

AU - Portnoi, E. L.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - We demonstrate that bulk GaAs irradiated by heavy Au+ ions shows efficient saturable absorption with subpicosecond recovery time and without any relaxation rate saturation up to excitation densities as high as 1.6mJ/cm2. A comparison with other types of ion irradiation shows that heavy-ion-irradiated GaAs is a very promising material for ultrafast optoelectronics and optical processing at high repetition rates.

AB - We demonstrate that bulk GaAs irradiated by heavy Au+ ions shows efficient saturable absorption with subpicosecond recovery time and without any relaxation rate saturation up to excitation densities as high as 1.6mJ/cm2. A comparison with other types of ion irradiation shows that heavy-ion-irradiated GaAs is a very promising material for ultrafast optoelectronics and optical processing at high repetition rates.

U2 - 10.1063/1.122873

DO - 10.1063/1.122873

M3 - Article

AN - SCOPUS:0010033346

SN - 0003-6951

VL - 73

SP - 3715

EP - 3717

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Intensity-invariant subpicosecond absorption saturation in heavy-ion irradiated bulk GaAs

Abstract

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