Interface properties and passivation of p-Si(1 1 1) surfaces by electrochemical organic layer deposition

A. G. Güell; K. Roodenko; F. Yang; K. Hinrichs; M. Gensch; F. Sanz; J. Rappich

doi:10.1016/j.mseb.2006.07.005

Interface properties and passivation of p-Si(1 1 1) surfaces by electrochemical organic layer deposition

A. G. Güell
, K. Roodenko
, F. Yang
, K. Hinrichs
, M. Gensch
, F. Sanz
, J. Rappich

Research output: Contribution to journal › Article › peer-review

Abstract

The grafting of nitrobenzene and bromobenzene onto H-terminated p-Si(1 1 1) surfaces in the presence of HF in the aqueous diazonium salt containing solution was investigated by in situ photoluminescence (PL) and ex situ infrared ellipsometric spectroscopy (IR-SE). The PL measurements revealed that the grafting process is faster for nitrobenzene and that the Si-phenyl interface is well passivated. Aging experiments in ambient air showed that the organic layers on Si have a better stability against oxidation and therefore, against defect formation than the H-terminated Si(1 1 1) surface.

Original language	English
Pages (from-to)	273-276
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	134
Issue number	2-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mseb.2006.07.005
Publication status	Published - 15 Oct 2006
Externally published	Yes

Keywords

Electrochemical deposition
Infrared Spectroscopic ellipsometry
Organic layer
Passivation
Photoluminescence
Photovoltage

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10.1016/j.mseb.2006.07.005

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title = "Interface properties and passivation of p-Si(1 1 1) surfaces by electrochemical organic layer deposition",

abstract = "The grafting of nitrobenzene and bromobenzene onto H-terminated p-Si(1 1 1) surfaces in the presence of HF in the aqueous diazonium salt containing solution was investigated by in situ photoluminescence (PL) and ex situ infrared ellipsometric spectroscopy (IR-SE). The PL measurements revealed that the grafting process is faster for nitrobenzene and that the Si-phenyl interface is well passivated. Aging experiments in ambient air showed that the organic layers on Si have a better stability against oxidation and therefore, against defect formation than the H-terminated Si(1 1 1) surface.",

keywords = "Electrochemical deposition, Infrared Spectroscopic ellipsometry, Organic layer, Passivation, Photoluminescence, Photovoltage",

author = "G{\"u}ell, \{A. G.\} and K. Roodenko and F. Yang and K. Hinrichs and M. Gensch and F. Sanz and J. Rappich",

year = "2006",

month = oct,

day = "15",

doi = "10.1016/j.mseb.2006.07.005",

language = "English",

volume = "134",

pages = "273--276",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

number = "2-3 SPEC. ISS.",

}

TY - JOUR

T1 - Interface properties and passivation of p-Si(1 1 1) surfaces by electrochemical organic layer deposition

AU - Güell, A. G.

AU - Roodenko, K.

AU - Yang, F.

AU - Hinrichs, K.

AU - Gensch, M.

AU - Sanz, F.

AU - Rappich, J.

PY - 2006/10/15

Y1 - 2006/10/15

N2 - The grafting of nitrobenzene and bromobenzene onto H-terminated p-Si(1 1 1) surfaces in the presence of HF in the aqueous diazonium salt containing solution was investigated by in situ photoluminescence (PL) and ex situ infrared ellipsometric spectroscopy (IR-SE). The PL measurements revealed that the grafting process is faster for nitrobenzene and that the Si-phenyl interface is well passivated. Aging experiments in ambient air showed that the organic layers on Si have a better stability against oxidation and therefore, against defect formation than the H-terminated Si(1 1 1) surface.

AB - The grafting of nitrobenzene and bromobenzene onto H-terminated p-Si(1 1 1) surfaces in the presence of HF in the aqueous diazonium salt containing solution was investigated by in situ photoluminescence (PL) and ex situ infrared ellipsometric spectroscopy (IR-SE). The PL measurements revealed that the grafting process is faster for nitrobenzene and that the Si-phenyl interface is well passivated. Aging experiments in ambient air showed that the organic layers on Si have a better stability against oxidation and therefore, against defect formation than the H-terminated Si(1 1 1) surface.

KW - Electrochemical deposition

KW - Infrared Spectroscopic ellipsometry

KW - Organic layer

KW - Passivation

KW - Photoluminescence

KW - Photovoltage

U2 - 10.1016/j.mseb.2006.07.005

DO - 10.1016/j.mseb.2006.07.005

M3 - Article

AN - SCOPUS:33750314731

SN - 0921-5107

VL - 134

SP - 273

EP - 276

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 2-3 SPEC. ISS.

ER -

Interface properties and passivation of p-Si(1 1 1) surfaces by electrochemical organic layer deposition

Abstract

Keywords

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