Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy

A. S. Gudovskikh; J. P. Kleider; J. Damon-Lacoste; P. Roca i Cabarrocas; Y. Veschetti; J. C. Muller; P. J. Ribeyron; E. Rolland

doi:10.1016/j.tsf.2005.12.111

Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy

A. S. Gudovskikh
, J. P. Kleider
, J. Damon-Lacoste
, P. Roca i Cabarrocas
, Y. Veschetti
, J. C. Muller
, P. J. Ribeyron
, E. Rolland

Université Paris-Sud 11
Institut polytechnique de Paris
Centre national de la recherche scientifique
Univ. Joseph Fourier-Grenoble 1

Research output: Contribution to journal › Article › peer-review

Abstract

The capabilities of admittance spectroscopy, in particular the dependences of the admittance upon frequency, temperature and applied bias, for the investigation of a-Si:H/c-Si heterojunctions are presented. Experimental results and results from a numerical modelling are described for n-type a-Si:H/p-type c-Si heterojunctions. These results compare very well and show that the admittance technique is sensitive to parameters of the a-Si:H/c-Si interface quality. The influence of different interface parameters, such as absolute value of defect density, hole and electron capture cross-sections is studied by the simulation. This simulation tool enables a detailed analysis of experimental results. In particular, it allows us to precise whether the capacitance signal is related to exchanges between interface states and electrons from the a-Si:H or (and) holes from the c-Si. The application of the admittance technique for a rapid a-Si:H/c-Si interface characterisation is discussed.

Original language	English
Pages (from-to)	385-389
Number of pages	5
Journal	Thin Solid Films
Volume	511-512
DOIs	https://doi.org/10.1016/j.tsf.2005.12.111
Publication status	Published - 26 Jul 2006

Keywords

Capacitance technique
Heterojunction
Solar cells

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10.1016/j.tsf.2005.12.111

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@article{3c996d9d5aea43818db11da179ab805b,

title = "Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy",

abstract = "The capabilities of admittance spectroscopy, in particular the dependences of the admittance upon frequency, temperature and applied bias, for the investigation of a-Si:H/c-Si heterojunctions are presented. Experimental results and results from a numerical modelling are described for n-type a-Si:H/p-type c-Si heterojunctions. These results compare very well and show that the admittance technique is sensitive to parameters of the a-Si:H/c-Si interface quality. The influence of different interface parameters, such as absolute value of defect density, hole and electron capture cross-sections is studied by the simulation. This simulation tool enables a detailed analysis of experimental results. In particular, it allows us to precise whether the capacitance signal is related to exchanges between interface states and electrons from the a-Si:H or (and) holes from the c-Si. The application of the admittance technique for a rapid a-Si:H/c-Si interface characterisation is discussed.",

keywords = "Capacitance technique, Heterojunction, Solar cells",

author = "Gudovskikh, \{A. S.\} and Kleider, \{J. P.\} and J. Damon-Lacoste and \{Roca i Cabarrocas\}, P. and Y. Veschetti and Muller, \{J. C.\} and Ribeyron, \{P. J.\} and E. Rolland",

year = "2006",

month = jul,

day = "26",

doi = "10.1016/j.tsf.2005.12.111",

language = "English",

volume = "511-512",

pages = "385--389",

journal = "Thin Solid Films",

issn = "0040-6090",

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TY - JOUR

T1 - Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy

AU - Gudovskikh, A. S.

AU - Kleider, J. P.

AU - Damon-Lacoste, J.

AU - Roca i Cabarrocas, P.

AU - Veschetti, Y.

AU - Muller, J. C.

AU - Ribeyron, P. J.

AU - Rolland, E.

PY - 2006/7/26

Y1 - 2006/7/26

N2 - The capabilities of admittance spectroscopy, in particular the dependences of the admittance upon frequency, temperature and applied bias, for the investigation of a-Si:H/c-Si heterojunctions are presented. Experimental results and results from a numerical modelling are described for n-type a-Si:H/p-type c-Si heterojunctions. These results compare very well and show that the admittance technique is sensitive to parameters of the a-Si:H/c-Si interface quality. The influence of different interface parameters, such as absolute value of defect density, hole and electron capture cross-sections is studied by the simulation. This simulation tool enables a detailed analysis of experimental results. In particular, it allows us to precise whether the capacitance signal is related to exchanges between interface states and electrons from the a-Si:H or (and) holes from the c-Si. The application of the admittance technique for a rapid a-Si:H/c-Si interface characterisation is discussed.

AB - The capabilities of admittance spectroscopy, in particular the dependences of the admittance upon frequency, temperature and applied bias, for the investigation of a-Si:H/c-Si heterojunctions are presented. Experimental results and results from a numerical modelling are described for n-type a-Si:H/p-type c-Si heterojunctions. These results compare very well and show that the admittance technique is sensitive to parameters of the a-Si:H/c-Si interface quality. The influence of different interface parameters, such as absolute value of defect density, hole and electron capture cross-sections is studied by the simulation. This simulation tool enables a detailed analysis of experimental results. In particular, it allows us to precise whether the capacitance signal is related to exchanges between interface states and electrons from the a-Si:H or (and) holes from the c-Si. The application of the admittance technique for a rapid a-Si:H/c-Si interface characterisation is discussed.

KW - Capacitance technique

KW - Heterojunction

KW - Solar cells

UR - https://www.scopus.com/pages/publications/33747399344

U2 - 10.1016/j.tsf.2005.12.111

DO - 10.1016/j.tsf.2005.12.111

M3 - Article

AN - SCOPUS:33747399344

SN - 0040-6090

VL - 511-512

SP - 385

EP - 389

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy

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Keywords

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