Intrinsic acceptors in semi-insulating gallium-arsenide studied by positron annihilation and ODMR

K. Krambrock; C. Le Berre; C. Corbel; K. Saarinen; P. Hautojarvi

doi:10.4028/www.scientific.net/msf.196-201.195

Intrinsic acceptors in semi-insulating gallium-arsenide studied by positron annihilation and ODMR

K. Krambrock
, C. Le Berre
, C. Corbel
, K. Saarinen
, P. Hautojarvi

Institut National des Sciences et Techniques Nucléaires

Research output: Contribution to journal › Conference article › peer-review

Abstract

A study combining optical absorption, MCDA, ODEPR and PAS in undoped SI GaAs shows that the concentrations of paramagnetic EL2, EL2⁺, and near bandgap Reverse Contrast absorptions, a paramagnetic Ga_As-related defect in trigonal symmetry and the concentrations of As vacancies are correlated.

Original language	English
Pages (from-to)	195-200
Number of pages	6
Journal	Materials Science Forum
Volume	196-201
Issue number	pt 1
DOIs	https://doi.org/10.4028/www.scientific.net/msf.196-201.195
Publication status	Published - 1 Jan 1995
Externally published	Yes
Event	Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Duration: 23 Jul 1995 → 28 Jul 1995

Access to Document

10.4028/www.scientific.net/msf.196-201.195

Cite this

@article{845741dcc039448999ddba9396abc607,

title = "Intrinsic acceptors in semi-insulating gallium-arsenide studied by positron annihilation and ODMR",

abstract = "A study combining optical absorption, MCDA, ODEPR and PAS in undoped SI GaAs shows that the concentrations of paramagnetic EL2, EL2+, and near bandgap Reverse Contrast absorptions, a paramagnetic GaAs-related defect in trigonal symmetry and the concentrations of As vacancies are correlated.",

author = "K. Krambrock and \{Le Berre\}, C. and C. Corbel and K. Saarinen and P. Hautojarvi",

year = "1995",

month = jan,

day = "1",

doi = "10.4028/www.scientific.net/msf.196-201.195",

language = "English",

volume = "196-201",

pages = "195--200",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

number = "pt 1",

note = "Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) ; Conference date: 23-07-1995 Through 28-07-1995",

}

TY - JOUR

T1 - Intrinsic acceptors in semi-insulating gallium-arsenide studied by positron annihilation and ODMR

AU - Krambrock, K.

AU - Le Berre, C.

AU - Corbel, C.

AU - Saarinen, K.

AU - Hautojarvi, P.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A study combining optical absorption, MCDA, ODEPR and PAS in undoped SI GaAs shows that the concentrations of paramagnetic EL2, EL2+, and near bandgap Reverse Contrast absorptions, a paramagnetic GaAs-related defect in trigonal symmetry and the concentrations of As vacancies are correlated.

AB - A study combining optical absorption, MCDA, ODEPR and PAS in undoped SI GaAs shows that the concentrations of paramagnetic EL2, EL2+, and near bandgap Reverse Contrast absorptions, a paramagnetic GaAs-related defect in trigonal symmetry and the concentrations of As vacancies are correlated.

U2 - 10.4028/www.scientific.net/msf.196-201.195

DO - 10.4028/www.scientific.net/msf.196-201.195

M3 - Conference article

AN - SCOPUS:0029518938

SN - 0255-5476

VL - 196-201

SP - 195

EP - 200

JO - Materials Science Forum

JF - Materials Science Forum

IS - pt 1

T2 - Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4)

Y2 - 23 July 1995 through 28 July 1995

ER -

Intrinsic acceptors in semi-insulating gallium-arsenide studied by positron annihilation and ODMR

Abstract

Access to Document

Fingerprint

Cite this