Abstract
Positron lifetime measurements on electron irradiated SI GaAs indicate the presence of Ga vacancies and Ga antisites in a negative charge state. Illumination of the sample reveals another vacancy defect, which is metastable at 30 K and anneals out at temperatures 100 - 120 K. The introduction rate of this defect is about 0.3 cm-1. The metastable properties of the defect resemble those of the EL2 center in as-grown GaAs. We associate the defects to As antisites, which in the metastable configuration relax away from the lattice site leaving a Ga site vacant.
| Original language | English |
|---|---|
| Pages (from-to) | 1055-1060 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 196-201 |
| Issue number | pt 2 |
| DOIs | |
| Publication status | Published - 1 Jan 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Duration: 23 Jul 1995 → 28 Jul 1995 |
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